MT29F512G08EBHAFJ4-3ITFES:A TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 950 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | PENDING ECCN | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EBHAFJ4-3ITFES:A TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBHAFJ4-3ITFES:A TR is a 512 Gbit parallel NAND flash memory device using FLASH - NAND (TLC) technology. It provides high-density non-volatile storage in a compact 132-VBGA (12×18) package.
With a 64G × 8 memory organization, a parallel interface, a 333 MHz clock frequency, and a supply range of 2.5 V to 3.6 V, this device targets designs that require large-capacity on-board flash and reliable operation across a −40 °C to 85 °C temperature range.
Key Features
- Memory Technology Flash NAND (TLC) non-volatile memory delivering 512 Gbit of storage.
- Memory Organization 64G × 8 configuration providing byte-wide parallel access.
- Interface & Timing Parallel memory interface with a specified 333 MHz clock frequency for timing-critical designs.
- Voltage Range Operates from 2.5 V to 3.6 V to accommodate common system power rails.
- Package 132-VBGA supplier device package (12×18) for board-level integration.
- Operating Temperature Specified operating range of −40 °C to 85 °C (TA) for extended-temperature environments.
Typical Applications
- High-density non-volatile storage Provides a single-device solution where large on-board flash capacity (512 Gbit) is required.
- Embedded systems Integrates with designs that use a parallel memory interface and byte-wide data organization.
- Board-level memory modules Suited for compact PCB implementations using a 132-VBGA (12×18) footprint and wide operating temperature range.
Unique Advantages
- 512 Gbit capacity: Large single-device storage reduces the need for multiple flash components and simplifies board layout.
- Byte-wide organization: 64G × 8 layout supports straightforward parallel data access and legacy parallel-memory architectures.
- Wide supply range: 2.5 V to 3.6 V compatibility eases integration with various system power domains.
- Extended temperature operation: −40 °C to 85 °C rating supports use in temperature-challenging environments.
- Compact VBGA package: 132-VBGA (12×18) supplier device package enables dense board integration.
- Defined timing capability: 333 MHz clock frequency supports designs that require defined timing performance.
Why Choose MT29F512G08EBHAFJ4-3ITFES:A TR?
The MT29F512G08EBHAFJ4-3ITFES:A TR combines high-capacity 512 Gbit NAND flash with a parallel, byte-wide organization and a compact 132-VBGA package, providing a straightforward option for designs requiring large on-board non-volatile storage. Its 2.5 V to 3.6 V supply range and −40 °C to 85 °C operating range make it applicable to systems with diverse power and temperature requirements.
This device is well suited to engineers and procurement teams specifying high-density parallel flash for board-level integration where capacity, package footprint, and defined electrical/timing characteristics are primary selection criteria.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F512G08EBHAFJ4-3ITFES:A TR.
