MT29F512G08EBHAFJ4-3R:A

The MT29F512G08EBHAFJ4-3R:A is a 512 Gbit non-volatile flash memory device implemented in NAND (TLC) technology with a parallel memory interface. It is organized as 64G × 8 and is supplied in a 132-VBGA (12×18) package.

Designed for applications that require high-density parallel flash storage, the device supports a 2.5 V to 3.6 V supply range and operates at a clock frequency up to 333 MHz with an ambient operating temperature range of 0°C to 70°C.

Key Features

• Memory Type & Technology Non-volatile NAND flash using TLC technology, providing a 512 Gbit density organized as 64G × 8.
• Interface & Performance Parallel memory interface with a specified clock frequency up to 333 MHz for synchronous operation.
• Supply Voltage Wide operating voltage range from 2.5 V to 3.6 V to accommodate a variety of system power architectures.
• Package 132-VBGA package (12×18 mm) for compact board-level integration and mechanical footprint consistency.
• Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
• Memory Organization 64G × 8 organization for straightforward byte-oriented interfacing in parallel memory systems.

Typical Applications

• Embedded Storage Systems Provides high-density non-volatile storage suitable for board-level embedded storage implementations that use parallel flash.
• Firmware and Code Storage Used where large firmware or code images must be stored in parallel flash memory.
• Consumer and Industrial Devices Applicable to devices operating within a 0°C to 70°C ambient range that require 512 Gbit parallel flash capacity.

Unique Advantages

• High Storage Density: 512 Gbit capacity reduces the need for multiple memory devices when large non-volatile storage is required.
• Parallel Interface with Defined Clock Rate: Parallel operation with up to 333 MHz clocking supports synchronous system integration where parallel flash is specified.
• Flexible Supply Range: 2.5 V to 3.6 V support enables compatibility with common system power rails.
• Compact VBGA Package: 132-VBGA (12×18) package offers a compact footprint for board-level integration while maintaining high capacity.
• Clear Operating Window: Specified 0°C to 70°C ambient range provides deterministic thermal behavior for target deployments within that range.

Why Choose IC FLASH 512GBIT PAR 132VBGA?

The MT29F512G08EBHAFJ4-3R:A positions itself as a high-density, parallel NAND flash component for designs that require 512 Gbit of non-volatile storage in a compact VBGA package. Its defined clock frequency, wide supply voltage range, and clear operating temperature make it suitable for systems that integrate parallel flash memory and require predictable electrical and thermal specifications.

This device is appropriate for engineers and procurement teams specifying board-level parallel flash for embedded storage, firmware storage, or other applications that fall within the provided voltage and temperature parameters. Its package and organization simplify layout and system integration where parallel NAND flash is required.

If you would like pricing or availability details, request a quote or submit an inquiry to receive further purchasing information and support.