MT29F512G08EBHAFB17A3WC1-FES
| Part Description |
IC FLASH 512GBIT PARALLEL DIE |
|---|---|
| Quantity | 29 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F512G08EBHAFB17A3WC1-FES – IC FLASH 512GBIT PARALLEL DIE
The MT29F512G08EBHAFB17A3WC1-FES is a 512 Gbit non-volatile flash memory die from Micron Technology Inc. It implements NAND flash technology (TLC) in a parallel interface format and is supplied as a die for integration into custom packages or modules.
Designed for applications that require high-density, parallel-access flash storage, the device provides a 64G × 8 memory organization and operates across a 2.5 V to 3.6 V supply range with an operating temperature of 0°C to 70°C.
Key Features
- Memory Core Non-volatile NAND flash using TLC technology, providing multi-level storage in a single die.
- Capacity & Organization 512 Gbit total capacity with a 64G × 8 memory organization for parallel byte-wide access.
- Interface Parallel memory interface suitable for designs that require byte-wide NAND access.
- Power Wide supply range of 2.5 V to 3.6 V to support varied system voltage domains.
- Package Supplied as a die (Package/Case: Die, Supplier Device Package: Die) for custom integration and assembly workflows.
- Environmental Operating temperature range of 0°C to 70°C for standard commercial-temperature applications.
Typical Applications
- Parallel flash storage systems Used where parallel NAND flash is required for byte-wide storage and direct-memory access designs.
- Embedded memory integration Integrated as a die into custom modules or assemblies that demand high-capacity non-volatile memory.
- Custom module assembly For manufacturers assembling memory modules or devices that incorporate die-level NAND flash.
Unique Advantages
- High-density storage: 512 Gbit capacity enables substantial non-volatile storage within a single die footprint.
- Parallel-access organization: 64G × 8 organization provides byte-wide parallel access for legacy or specialized parallel memory interfaces.
- Flexible supply voltage: 2.5 V to 3.6 V support allows integration with common system voltage rails.
- Die form factor: Supplied as a die for direct integration into custom packaging or module designs, enabling tailored assembly approaches.
- TLC NAND technology: Triple-level cell NAND provides higher bit density per cell for storage-focused designs.
Why Choose IC FLASH 512GBIT PARALLEL DIE?
The MT29F512G08EBHAFB17A3WC1-FES positions itself as a high-density, parallel-interface NAND flash die suited to designs that require substantial non-volatile storage in a die-level form factor. Its 512 Gbit capacity, 64G × 8 organization, and TLC NAND technology make it appropriate for integration where parallel byte-wide access and compact die integration are priorities.
Engineers and manufacturers seeking a Micron-supplied die with a 2.5 V–3.6 V supply window and a commercial operating range of 0°C to 70°C will find this device applicable for custom memory module assembly and embedded storage integration tasks.
Request a quote or submit a pricing and availability inquiry to receive lead-time and volume-pricing information for the MT29F512G08EBHAFB17A3WC1-FES.
