MT29F512G08CUCABJ3-10RZ:A
| Part Description |
IC FLASH 512GBIT PAR 132LBGA |
|---|---|
| Quantity | 1,952 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABJ3-10RZ:A – IC FLASH 512GBIT PAR 132LBGA
The MT29F512G08CUCABJ3-10RZ:A is a 512 Gbit non-volatile NAND flash memory device using MLC technology. It is organized as 64G × 8 and provides a parallel memory interface with a 100 MHz clock frequency.
The device is specified for operation from 0°C to 70°C (TA), operates from a 2.7 V to 3.6 V supply, and is supplied in a 132-LBGA (12×18) package for board-level integration.
Key Features
- Memory Type & Organization Non-volatile NAND flash (MLC) organized as 64G × 8 for a total density of 512 Gbit.
- Interface & Timing Parallel memory interface with a 100 MHz clock frequency for synchronous memory operations.
- Power Operates from a 2.7 V to 3.6 V supply voltage range.
- Package 132-LBGA surface-mount package (12×18) for compact board-level mounting.
- Operating Temperature Specified commercial temperature range of 0°C to 70°C (TA).
- Memory Format FLASH - NAND (MLC) memory format providing non-volatile storage.
Unique Advantages
- High-density storage: 512 Gbit capacity enables consolidation of large data storage into a single device.
- Parallel interface compatibility: Parallel memory interface supports integration with systems designed for parallel flash architectures.
- Standard BGA footprint: 132-LBGA (12×18) package offers a compact form factor for space-constrained boards.
- Wide supply range: 2.7 V–3.6 V voltage range aligns with common system power rails.
- Commercial temperature rating: Specified operation from 0°C to 70°C for standard commercial environments.
- Clear memory organization: 64G × 8 organization simplifies capacity planning and system memory mapping.
Why Choose IC FLASH 512GBIT PAR 132LBGA?
The MT29F512G08CUCABJ3-10RZ:A combines a high 512 Gbit MLC NAND density with a parallel interface and 100 MHz clocking in a compact 132-LBGA (12×18) package. Its defined voltage range (2.7 V–3.6 V) and commercial temperature rating (0°C–70°C) provide concrete integration parameters for system design and BOM planning.
This device is well suited for designs that require a clear specification for non-volatile, high-density parallel flash memory and straightforward mechanical integration on the PCB.
Request a quote or submit an inquiry for pricing and availability of the MT29F512G08CUCABJ3-10RZ:A.
