MT29F512G08CUCABH3-10Z:A TR
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 1,074 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10Z:A TR – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10Z:A TR is a non-volatile NAND flash memory device implementing multi-level cell (MLC) FLASH technology with a 512 Gbit capacity. It is organized as 64G × 8 and delivered in a 100-LBGA (12×18) package.
Designed for systems that require high-density parallel NAND storage, this device operates from a 2.7 V to 3.6 V supply, supports a 100 MHz clock, and is specified for a commercial operating temperature range of 0°C to 70°C.
Key Features
- Memory Technology FLASH - NAND (MLC) multi-level cell architecture as specified for this device.
- Density & Organization 512 Gbit capacity organized as 64G × 8 for large non-volatile storage requirements.
- Interface Parallel memory interface with a clock frequency rating of 100 MHz.
- Supply Voltage Operates from 2.7 V to 3.6 V to match common 3.3 V system rails.
- Package 100-LBGA package, 12 × 18 mm footprint for board-mount integration.
- Operating Temperature Specified for commercial ambient conditions from 0°C to 70°C (TA).
- Memory Format Non-volatile FLASH memory suitable for persistent data and code storage.
Typical Applications
- Embedded storage — High-density parallel NAND memory for systems that require large on-board non-volatile storage.
- Firmware and code storage — Retains program code and updates in designs that use a parallel flash interface and standard supply voltages.
- Data logging and archival — Provides substantial non-volatile capacity for applications that need sizeable local storage within a 0°C–70°C operating range.
Unique Advantages
- High-density capacity: 512 Gbit storage in a single device reduces the need for multiple chips or complex memory stacking.
- Parallel interface with 100 MHz clock: Supports designs that use parallel memory timing and a defined clock rate for interface integration.
- Wide supply compatibility: 2.7 V to 3.6 V operating range aligns with common 3.3 V system rails for straightforward power integration.
- Compact BGA package: 100-LBGA (12×18) footprint enables space-efficient board layouts.
- Commercial temperature grade: Specified 0°C to 70°C operation for standard commercial applications.
Why Choose MT29F512G08CUCABH3-10Z:A TR?
This MT29F512G08CUCABH3-10Z:A TR device delivers high-density MLC NAND flash in a compact 100-LBGA package with a parallel interface and a 100 MHz clock rating. Its voltage range (2.7 V–3.6 V) and commercial temperature specification (0°C–70°C) make it suitable for designs that require a large, board-mounted non-volatile memory element compatible with common system rails and environments.
Engineers and procurement teams seeking a straightforward, high-capacity parallel flash component can integrate this device where predictable interface timing, package footprint, and standard operating conditions are primary considerations.
Request a quote or submit an inquiry to obtain pricing and availability for the MT29F512G08CUCABH3-10Z:A TR.
