MT29F512G08CUCABH3-10R:A TR

The MT29F512G08CUCABH3-10R:A TR is a 512 Gbit non-volatile flash memory device based on NAND (MLC) technology. It is organized as 64G × 8 and provides parallel memory interface operation with a 100 MHz clock frequency.

Designed for systems that require high-density NAND storage in a compact BGA footprint, this device offers a 100‑LBGA (12×18) package and operates from a 2.7 V to 3.6 V supply across an ambient temperature range of 0°C to 70°C.

Key Features

• Memory Core 512 Gbit capacity implemented as 64G × 8 using FLASH - NAND (MLC) technology for dense non-volatile storage.
• Interface & Timing Parallel memory interface with a specified clock frequency of 100 MHz to match parallel bus timing requirements.
• Voltage Range Operates from 2.7 V to 3.6 V, enabling compatibility with a range of 3 V nominal system power rails.
• Package 100‑LBGA package; supplier device package specified as 100‑LBGA (12×18) for compact board-level integration.
• Operating Conditions Ambient operating temperature range of 0°C to 70°C (TA), suitable for standard commercial temperature environments.

Typical Applications

• Embedded Storage Modules Provides high-density non-volatile storage for embedded systems that require large flash capacity in a compact package.
• Firmware and Code Storage Stores firmware, boot code, and large code images where parallel NAND memory organization is required.
• Consumer Electronics Used in consumer products that need high-capacity NAND flash with a compact 100‑LBGA footprint and standard commercial temperature operation.

Unique Advantages

• High Density Storage: 512 Gbit capacity (64G × 8) enables large datasets or code bases to be stored on a single device.
• MLC NAND Architecture: FLASH - NAND (MLC) technology provides multi-level cell storage for increased bit density per die.
• Parallel Interface Compatibility: Parallel memory interface and 100 MHz clock frequency support designs that utilize parallel NAND timing.
• Compact BGA Package: 100‑LBGA (12×18) package allows dense board integration where PCB area and height are constrained.
• Flexible Power Range: 2.7 V to 3.6 V supply range supports integration with common 3 V system rails.
• Commercial Temperature Suitability: Rated for 0°C to 70°C ambient operation to match standard commercial applications.

Why Choose MT29F512G08CUCABH3-10R:A TR?

The MT29F512G08CUCABH3-10R:A TR combines high-capacity MLC NAND architecture with a parallel interface and a compact 100‑LBGA (12×18) package, making it suitable for designs that need dense non-volatile storage in limited board space. Its 2.7 V to 3.6 V supply range and 0°C to 70°C operating window align with common commercial system requirements.

This device is positioned for engineers and procurement teams specifying high-density parallel NAND flash from a recognized manufacturer, offering straightforward electrical and mechanical integration for projects where capacity and package density are primary considerations.

Request a quote or submit a sales inquiry to obtain pricing, lead times, and availability for the MT29F512G08CUCABH3-10R:A TR.