MT29F512G08CUCABH3-10RZ:A
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 8 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10RZ:A – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10RZ:A is a 512 Gbit non-volatile Flash memory device based on NAND (MLC) technology. It provides a parallel memory interface with a 100 MHz clock and is offered in a 100-LBGA (12×18) package for compact board-level integration.
Designed for systems requiring high-density, parallel-access flash storage, this device supports operation across a 2.7V to 3.6V supply range and an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Technology NAND Flash (MLC) non-volatile memory providing multi-level cell storage.
- Density & Organization 512 Gbit capacity organized as 64G × 8 to deliver high storage density in a single package.
- Interface & Performance Parallel memory interface with a 100 MHz clock frequency for synchronous access patterns.
- Voltage Supply Operates from 2.7V to 3.6V, enabling compatibility with common 3V system rails.
- Package 100-LBGA (12×18) ball grid array package for space-efficient PCB mounting.
- Operating Temperature Specified for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Embedded Storage High-density non-volatile storage for systems that require 512 Gbit of NAND Flash in a parallel interface.
- Industrial Electronics Board-level flash memory for equipment operating within a 0°C to 70°C ambient temperature range.
- Consumer Devices Device-level mass storage where a 100-LBGA package and 2.7V–3.6V supply compatibility are required.
Unique Advantages
- High storage density: 512 Gbit capacity (64G × 8) reduces the need for multiple devices when large non-volatile storage is required.
- Parallel interface with 100 MHz clock: Supports parallel access schemes and designs that use a 100 MHz timing domain.
- Wide supply voltage range: 2.7V–3.6V operation simplifies integration with standard 3V system rails.
- Compact LBGA package: 100-LBGA (12×18) package enables dense PCB layouts while maintaining ball-grid reliability.
- Manufacturer pedigree: Supplied by Micron Technology Inc., providing traceability to an established memory vendor.
Why Choose IC FLASH 512GBIT PAR 100LBGA?
The MT29F512G08CUCABH3-10RZ:A positions itself as a high-density parallel NAND Flash solution that balances capacity, interface compatibility, and package economy. Its 512 Gbit MLC architecture and 100 MHz parallel interface suit designs that need substantial non-volatile storage in a compact LBGA footprint.
This device is appropriate for engineers and procurement teams specifying board-level flash where a 2.7V–3.6V supply, 0°C–70°C ambient range, and 100-LBGA packaging are alignment criteria. Sourcing this part from Micron Technology Inc. provides visibility to product origins and manufacturing provenance.
Request a quote or submit an inquiry to receive pricing and availability information for the MT29F512G08CUCABH3-10RZ:A.
