MT29F512G08CUCABH3-10R:A
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 1,635 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10R:A – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10R:A is a 512 Gbit non-volatile NAND flash memory device implemented with MLC flash technology and organized as 64G × 8. It provides parallel memory access with a 100 MHz clock frequency and operates from a 2.7 V to 3.6 V supply.
This device is intended for systems that require high-density parallel flash storage in a 100-LBGA (12 × 18 mm) package, supporting designs that operate within a 0°C to 70°C ambient temperature range.
Key Features
- Memory Core 512 Gbit NAND flash using MLC technology, organized as 64G × 8 for high-density non-volatile storage.
- Interface & Performance Parallel memory interface with a 100 MHz clock frequency for deterministic parallel access timing.
- Power Single supply operation over a 2.7 V to 3.6 V range to accommodate common system power rails.
- Package 100-LBGA package (12 × 18 mm) for board-level integration where BGA mounting is required.
- Temperature Range Specified operating ambient temperature from 0°C to 70°C (TA).
- Memory Format Non-volatile FLASH memory formatted as parallel NAND for bulk data storage.
Typical Applications
- High-density storage systems — Use where 512 Gbit of parallel NAND flash is required for bulk non-volatile data storage.
- Embedded systems — Integrates into embedded designs that require parallel flash memory in a 100-LBGA footprint.
- Data logging and archival — Suitable for designs that need persistent storage within the specified 0°C to 70°C operating range.
Unique Advantages
- Large storage capacity: 512 Gbit density enables consolidation of large datasets or firmware images into a single device.
- Parallel interface with 100 MHz clock: Provides predictable parallel access timing for systems designed around a parallel memory bus.
- Wide supply voltage range: 2.7 V to 3.6 V operation simplifies integration into systems using common 3.3 V rails.
- Compact BGA footprint: 100-LBGA (12 × 18 mm) package supports high-density PCB layouts and BGA mounting processes.
- Commercial temperature rating: Specified 0°C to 70°C operation for typical commercial applications and environments.
Why Choose IC FLASH 512GBIT PAR 100LBGA?
The MT29F512G08CUCABH3-10R:A positions itself as a high-density parallel NAND flash device that balances capacity and integration for board-level designs. Its 512 Gbit MLC architecture, parallel interface, and 100-LBGA package make it suitable for projects that require consolidated non-volatile storage within a defined commercial temperature range.
This device is a fit for engineers and procurement teams targeting systems that need large-capacity parallel flash memory with standard 3.3 V-class power, predictable clocked access, and a compact BGA footprint—providing a straightforward option for scalable, board-mounted non-volatile storage.
Request a quote or contact sales to discuss pricing, availability, and lead times for the MT29F512G08CUCABH3-10R:A.
