MT29F512G08CUCABH3-10Z:A
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 786 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10Z:A – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10Z:A is a 512 Gbit, parallel NAND flash memory device implemented in MLC (multi-level cell) technology. It is a non-volatile FLASH memory organized as 64G × 8 and designed for systems that require high-density parallel storage.
Key electrical and mechanical attributes include a 100 MHz clock frequency, a 2.7 V to 3.6 V supply range, a 100-LBGA (12×18) package, and an operating temperature range of 0°C to 70°C—providing a compact, high-capacity memory option for commercial-temperature designs.
Key Features
- Memory Core MLC NAND flash technology delivering 512 Gbit of non-volatile storage, organized as 64G × 8.
- Interface Parallel memory interface with a 100 MHz clock frequency for synchronous parallel access.
- Power Operates from a 2.7 V to 3.6 V supply range, supporting standard single-supply system designs.
- Package 100-LBGA package (12×18 mm) offering a compact surface-mount footprint.
- Temperature Range Rated for commercial operation from 0°C to 70°C (TA).
- Memory Format FLASH — non-volatile storage suitable for persistent data retention.
Unique Advantages
- High-density storage: 512 Gbit capacity enables large data storage in a single device, reducing the need for multiple chips.
- Parallel access at 100 MHz: Supports parallel bus architectures with a defined 100 MHz clock for predictable timing.
- MLC NAND technology: Multi-level cell FLASH provides increased bits per cell for higher capacity within the same die area.
- Wide supply tolerance: 2.7 V–3.6 V operation simplifies integration into systems using common supply rails.
- Compact LBGA footprint: 100-LBGA (12×18) package minimizes PCB area for space-constrained designs.
- Commercial temperature rating: 0°C–70°C specification aligns with standard commercial applications and environments.
Why Choose IC FLASH 512GBIT PAR 100LBGA?
The MT29F512G08CUCABH3-10Z:A positions itself as a straightforward, high-capacity parallel NAND flash solution for designs that require large non-volatile memory in a compact LBGA package. Its combination of 512 Gbit capacity, 64G × 8 organization, and MLC technology provides substantial storage density while maintaining a standard parallel interface and 100 MHz clocking.
This device is well suited to commercial-design teams seeking high-density, non-volatile FLASH with a clear supply voltage window (2.7 V–3.6 V) and a defined operating temperature range (0°C–70°C). The 100-LBGA (12×18) package and parallel interface support compact board layouts and traditional parallel-memory architectures.
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