MT29F512G08CUCABH3-12ITZ:A
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 678 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-12ITZ:A – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-12ITZ:A is a 512 Gbit parallel NAND flash memory device implemented with multi-level cell (MLC) technology. It is organized as 64G × 8 and provides a parallel memory interface with a specified clock frequency of 83 MHz.
Key device characteristics include a 100-LBGA (12×18) package, an operating voltage range of 2.7 V to 3.6 V, and an ambient operating temperature range of 0°C to 70°C, delivering high-density non-volatile storage in a compact BGA footprint.
Key Features
- Memory Core: NAND MLC flash memory implemented as non-volatile storage for persistent data retention.
- Capacity & Organization: 512 Gbit total capacity with a memory organization of 64G × 8, enabling high-density single-device storage.
- Interface & Timing: Parallel memory interface with a clock frequency specified at 83 MHz for synchronized parallel access.
- Power: Supply voltage range of 2.7 V to 3.6 V for integration with standard 3.3 V systems.
- Package: 100-LBGA package (12×18 mm) for compact board-level integration.
- Operating Conditions: Specified operating ambient temperature range of 0°C to 70°C.
Unique Advantages
- High-density storage: 512 Gbit capacity reduces the need for multiple devices when large non-volatile storage is required.
- Parallel interface: Parallel memory interface supports system designs that require byte-wide access and synchronized clocking at 83 MHz.
- MLC NAND technology: Multi-level cell implementation enables increased bit density within the device’s specified capacity.
- Flexible supply range: 2.7 V to 3.6 V operation accommodates typical 3.3 V system environments.
- Compact BGA footprint: 100-LBGA (12×18) package provides a space-efficient solution for board-level integration.
- Defined operating range: Specified ambient temperature range of 0°C to 70°C supports standard commercial temperature deployments.
Why Choose MT29F512G08CUCABH3-12ITZ:A?
The MT29F512G08CUCABH3-12ITZ:A delivers a high-capacity, parallel NAND flash option in a compact 100-LBGA package, combining 512 Gbit density with an 83 MHz clock-spec parallel interface and a 64G × 8 organization. Its 2.7 V to 3.6 V supply range and defined 0°C to 70°C operating window make it suitable for designs that require large non-volatile storage in a standardized BGA form factor.
This device is well suited to projects that need single-device high-density flash memory with parallel access and compact board footprint, offering straightforward integration based on the provided electrical, timing, and package specifications.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F512G08CUCABH3-12ITZ:A.
