MT29F512G08CUCABH3-12:A

The MT29F512G08CUCABH3-12:A is a 512 Gbit non-volatile NAND flash memory device using MLC technology with a parallel memory interface. It provides a 64G × 8 organization in a compact 100-LBGA (12×18) package for board-level integration.

Designed for designs that require high-density parallel flash storage, this device operates from a 2.7 V to 3.6 V supply and supports an 83 MHz clock frequency within an ambient temperature range of 0 °C to 70 °C.

Key Features

• Memory Type & Organization Non-volatile FLASH NAND (MLC) technology with a 64G × 8 organization to deliver 512 Gbit of storage.
• Capacity 512 Gbit memory size suitable for storing large data sets on a single device.
• Interface & Timing Parallel memory interface with a clock frequency specification of 83 MHz for synchronous operation.
• Voltage Wide supply range of 2.7 V to 3.6 V to support common 3.3 V system rails.
• Package 100-LBGA package (12×18) provides a compact board-level footprint for high-density designs.
• Operating Temperature Specified ambient operating range of 0 °C to 70 C for commercial temperature applications.
• Manufacturer Supplied by Micron Technology Inc., with the device marketed under the part number MT29F512G08CUCABH3-12:A.

Typical Applications

• Parallel NAND storage systems — For systems that require high-density parallel NAND flash with an 83 MHz clock interface.
• Board-level non-volatile storage — Provides 512 Gbit of onboard flash in a 100-LBGA (12×18) footprint for compact designs.
• Designs operating at 2.7 V–3.6 V — Integrates into 3.3 V-compatible platforms that need MLC NAND storage.
• Commercial temperature applications — Suitable for deployments within the specified 0 °C to 70 °C ambient range.

Unique Advantages

• High-density storage: 512 Gbit capacity enables consolidation of large data volumes onto a single device, reducing board-level component count.
• Parallel interface support: Parallel memory connectivity with an 83 MHz clock simplifies integration with parallel memory controllers.
• Standard supply voltage: 2.7 V–3.6 V operation aligns with common 3.3 V system rails for simpler power design.
• Compact BGA footprint: 100-LBGA (12×18) package optimizes board real estate for space-constrained applications.
• MLC NAND technology: Multi-level cell architecture increases bit density per die for cost-efficient high-capacity storage.
• Manufacturer backing: Produced by Micron Technology Inc., offering a recognized supplier for sourcing and supply chain considerations.

Why Choose MT29F512G08CUCABH3-12:A?

The MT29F512G08CUCABH3-12:A combines high-density MLC NAND flash with a parallel interface and a compact 100-LBGA package, making it suitable for designs that require significant onboard non-volatile storage in a small footprint. Its 2.7 V–3.6 V supply range and 83 MHz clock support make it straightforward to integrate into common 3.3 V systems.

This device is appropriate for developers and procurement teams targeting commercial-temperature applications that need reliable, high-capacity parallel flash memory from a known manufacturer, Micron Technology Inc.

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