MT29F512G08CUCABH3-12ITZ:A TR
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 941 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-12ITZ:A TR – 512 Gbit NAND MLC Flash, Parallel Interface, 100-LBGA
The MT29F512G08CUCABH3-12ITZ:A TR from Micron Technology Inc. is a 512 Gbit non-volatile NAND flash memory device using MLC technology. It is organized as 64G x 8 and provides a parallel memory interface in a 100-LBGA (12×18) package.
This device targets designs that require high-density parallel flash storage with a defined operating range and standard supply voltage. Key electrical and mechanical parameters include an 83 MHz clock frequency, 2.7 V to 3.6 V supply range, and a 0°C to 70°C ambient operating temperature.
Key Features
- Memory Technology NAND flash, Multi-Level Cell (MLC) non-volatile memory format.
- Density & Organization 512 Gbit total capacity organized as 64G × 8.
- Interface & Timing Parallel memory interface with an 83 MHz clock frequency.
- Power Supply voltage range of 2.7 V to 3.6 V.
- Package 100-LBGA package, 12×18 mm footprint.
- Operating Temperature Specified for 0°C to 70°C (TA).
- Manufacturer Manufactured by Micron Technology Inc.
Unique Advantages
- High-density storage: 512 Gbit capacity (64G × 8) provides substantial non-volatile memory in a single device.
- Parallel interface for integration: Parallel memory interface and 83 MHz clock facilitate direct connection to parallel memory controllers.
- Standard supply compatibility: 2.7 V to 3.6 V supply range aligns with common system power rails.
- Compact LBGA package: 100-LBGA (12×18) offers a space-efficient footprint for board-level integration.
- Commercial temperature rating: Operates across a 0°C to 70°C ambient range for standard commercial applications.
Why Choose IC FLASH 512GBIT PAR 100LBGA?
The MT29F512G08CUCABH3-12ITZ:A TR combines substantial 512 Gbit NAND MLC capacity with a parallel interface and a compact 100-LBGA package, making it suitable for designs that require large non-volatile storage within a constrained footprint. Its defined clock and supply requirements simplify electrical integration into platforms that support parallel flash.
Engineers and procurement teams seeking a high-density parallel NAND flash device with clear electrical and mechanical specifications can consider this Micron-manufactured part for commercial-temperature applications where the stated supply, clock, and package parameters match system requirements.
Request a quote or contact sales to discuss pricing and availability for MT29F512G08CUCABH3-12ITZ:A TR.
