MT29F512G08CUCDBJ6-6R:D TR
| Part Description |
IC FLASH 512GBIT PAR 132LBGA |
|---|---|
| Quantity | 228 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCDBJ6-6R:D TR – IC FLASH 512GBIT PAR 132LBGA
The MT29F512G08CUCDBJ6-6R:D TR is a 512 Gbit non-volatile FLASH memory device using NAND (MLC) technology. It is organized as 64G × 8 and presented in a 132-LBGA (12×18) package.
With a parallel memory interface, a 166 MHz clock frequency, and a supply range of 2.7 V to 3.6 V, this device is intended for systems that require high-density parallel NAND flash storage within a compact BGA footprint and a commercial temperature range (0 °C to 70 °C).
Key Features
- Memory Technology NAND FLASH with MLC architecture providing non-volatile storage in a 512 Gbit device.
- Memory Organization Organized as 64G × 8 to simplify addressing and integration into parallel memory architectures.
- Interface & Performance Parallel memory interface with a 166 MHz clock frequency for synchronous operation with parallel controllers.
- Voltage Supply Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V system rails.
- Package 132-LBGA (12×18) supplier device package for space-efficient board-level integration.
- Operating Temperature Commercial temperature rating of 0 °C to 70 °C (TA).
Typical Applications
- Parallel NAND storage modules — Used as raw high-density flash in module designs that implement a parallel flash interface.
- Firmware and boot storage — Stores system firmware or boot images in designs that require large non-volatile memory arrays.
- Embedded systems — Provides mass storage for embedded applications requiring MLC NAND in a compact LBGA package within a 0 °C to 70 °C range.
Unique Advantages
- High-density capacity: 512 Gbit single-device capacity reduces the number of components required for large storage needs.
- Parallel interface compatibility: Parallel memory interface and 64G × 8 organization simplify integration into parallel-NAND architectures.
- MLC NAND technology: Multi-level cell architecture increases storage density in the same silicon area.
- Standard supply voltage range: 2.7 V–3.6 V operation aligns with common 3.3 V system rails for straightforward power integration.
- Compact BGA package: 132-LBGA (12×18) minimizes PCB area while providing a robust connection for high-pin-count memory.
Why Choose IC FLASH 512GBIT PAR 132LBGA?
The MT29F512G08CUCDBJ6-6R:D TR offers a high-capacity, parallel NAND flash option in a compact 132-LBGA package from Micron Technology Inc. Its 512 Gbit MLC architecture, 64G × 8 organization, and 166 MHz clock make it suitable for designs that need large non-volatile storage with a parallel interface and standard 3.3 V-class power.
This device is appropriate for engineers and procurement teams specifying high-density parallel flash for embedded storage, firmware, or module designs that operate within a commercial temperature range and require Micron-sourced NAND components.
Request a quote or submit an inquiry to receive pricing and availability information for the MT29F512G08CUCDBJ6-6R:D TR.
