MT29F512G08EBHAFB17A3WC1-R

The MT29F512G08EBHAFB17A3WC1-R is a 512 Gbit non-volatile FLASH memory device implemented as TLC NAND in a die form factor. It provides high-density storage organized as 64G × 8 with a parallel memory interface and supports a supply voltage range of 2.5 V to 3.6 V.

Designed for integration into systems that require die-level NAND flash, this device targets designs where compact, high-capacity non-volatile memory with a commercial temperature range is needed.

Key Features

• Memory Technology  TLC NAND flash memory providing non-volatile storage in a multi-level cell architecture.
• Capacity & Organization  512 Gbit total capacity organized as 64G × 8, enabling high-density storage in a single die.
• Interface & Voltage  Parallel memory interface for integration into parallel memory architectures; operates from 2.5 V to 3.6 V supply.
• Package & Mounting  Supplied as a die (Supplier Device Package: Die), suitable for direct die-level integration into custom assemblies.
• Operating Temperature  Rated for 0°C to 70°C operation, suitable for commercial temperature-range applications.

Typical Applications

• Die-level storage integration  Integration into custom modules or multi-die packages where a bare die form factor is required.
• High-density memory subsystems  Use in systems or assemblies that require 512 Gbit of non-volatile NAND storage with parallel interfacing.
• Commercial temperature-range designs  Suitable for products and equipment that operate within a 0°C to 70°C temperature window.

Unique Advantages

• High-density capacity: 512 Gbit organized as 64G × 8 delivers substantial non-volatile storage in a single die.
• Die form factor: Supplied as a die for direct integration into custom assemblies and multi-die solutions.
• TLC NAND architecture: Multi-level cell NAND provides a balance of density and non-volatile storage capability.
• Flexible supply range: Operates across 2.5 V to 3.6 V, supporting a range of system power designs.
• Parallel interface: Parallel memory interface supports integration with parallel memory architectures and controllers.
• Commercial temperature support: Specified for 0°C to 70°C operation to match common commercial system requirements.

Why Choose MT29F512G08EBHAFB17A3WC1-R?

The MT29F512G08EBHAFB17A3WC1-R is positioned for designs that require high-capacity NAND flash in a die form factor, offering 512 Gbit of TLC NAND organized as 64G × 8 and a parallel interface for direct integration. Its 2.5 V–3.6 V supply range and 0°C–70°C operating window make it suitable for commercial-temperature systems and custom memory assemblies.

This device is appropriate for engineering teams building bespoke storage modules, multi-die packages, or other applications where die-level NAND flash and predictable electrical and thermal parameters are required.

Request a quote or submit an inquiry for MT29F512G08EBHAFB17A3WC1-R to discuss availability, pricing, and integration details.