MT29F512G08CUCABJ3-10RZ:A TR
| Part Description |
IC FLASH 512GBIT PAR 132LBGA |
|---|---|
| Quantity | 179 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABJ3-10RZ:A TR – Parallel NAND Flash 512 Gbit 132-LBGA
The MT29F512G08CUCABJ3-10RZ:A TR is a 512 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements FLASH - NAND (MLC) technology in a parallel memory architecture.
This device is targeted at designs that require high-density, parallel-access non-volatile storage with a 132-LBGA (12×18) package and supply operation in the 2.7 V–3.6 V range. Key technical attributes include a 64G × 8 organization and a 100 MHz clock interface, combined with an operating temperature of 0°C–70°C (TA).
Key Features
- Memory Core 512 Gbit capacity implemented as FLASH - NAND (MLC) for non-volatile data storage; memory organization is 64G × 8.
- Interface & Performance Parallel memory interface with a 100 MHz clock frequency for system integration that requires parallel access.
- Power Operates from a 2.7 V–3.6 V supply range, suitable for systems designed around standard 3.3 V rails.
- Package 132-LBGA (12×18) supplier device package, providing a compact BGA footprint for board-level integration.
- Operating Temperature Rated for 0°C–70°C (TA), suitable for applications within this ambient temperature range.
- Memory Format FLASH memory format with parallel interface topology for applications requiring block-based non-volatile storage.
Typical Applications
- High-density system storage — Use where 512 Gbit of parallel NAND flash is required for bulk non-volatile data storage.
- Firmware and code storage — Suitable for systems that store firmware in parallel FLASH and operate on a 2.7 V–3.6 V supply.
- Embedded storage subsystems — Integration into embedded designs needing a 132-LBGA footprint and a 64G × 8 organization.
Unique Advantages
- Large 512 Gbit capacity: Provides substantial non-volatile storage in a single device, simplifying system memory architecture.
- Parallel interface with 100 MHz clock: Enables parallel-access integration for designs that rely on parallel FLASH connectivity.
- Standard 3.3 V-compatible supply range: Operates across 2.7 V–3.6 V, aligning with common system power rails.
- Compact 132-LBGA package: Offers a space-efficient BGA footprint (12×18) for PCB area-constrained designs.
- Clear operating temperature rating: Specified for 0°C–70°C (TA), allowing predictable thermal planning for ambient operating conditions.
Why Choose IC FLASH 512GBIT PAR 132LBGA?
The MT29F512G08CUCABJ3-10RZ:A TR positions itself as a high-density parallel NAND flash option combining 512 Gbit capacity, a 64G × 8 organization and a 100 MHz parallel interface in a compact 132-LBGA package. Its 2.7 V–3.6 V supply compatibility and defined 0°C–70°C operating range make it suitable for systems that require reliable non-volatile storage within those electrical and thermal envelopes.
This device is ideal for designers and procurement teams specifying a single large-capacity parallel FLASH component for firmware, code storage, or embedded data storage subsystems where package size, supply range and a parallel interface are determinative factors.
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