MT29F512G08CUCABH3-10RZ:A TR
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 768 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10RZ:A TR – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10RZ:A TR is a 512 Gbit non-volatile NAND flash memory device from Micron Technology Inc. It implements MLC NAND flash with a memory organization of 64G × 8 and a parallel memory interface.
Designed for system-level storage requiring high density in a compact footprint, the device is offered in a 100‑LBGA (12×18) package, supports a 100 MHz clock frequency and operates from a 2.7 V to 3.6 V supply over an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile NAND flash using MLC technology providing 512 Gbit total capacity organized as 64G × 8.
- Interface Parallel memory interface for direct integration into parallel flash systems.
- Clock Supports a 100 MHz clock frequency for timing reference within specified system designs.
- Voltage Single-supply operation across a 2.7 V to 3.6 V range to match typical system power rails.
- Package 100‑ball LGA package (100‑LBGA; 12 × 18 mm) for space-efficient board-level integration.
- Operating Range Rated for ambient operation from 0°C to 70°C (TA).
Unique Advantages
- High density storage: 512 Gbit capacity enables compact, high-capacity non-volatile storage in a single device.
- Parallel interface compatibility: Parallel memory interface supports integration into systems designed for parallel NAND flash.
- Compact LBGA package: 100‑LBGA (12×18) package reduces board footprint while providing a robust mounting option.
- Flexible supply range: 2.7 V to 3.6 V support allows operation with common system power rails.
- Specified temperature range: 0°C to 70°C operating specification suitable for standard commercial applications.
- Known manufacturer: Supplied by Micron Technology Inc., providing clear manufacturer traceability.
Why Choose IC FLASH 512GBIT PAR 100LBGA?
The MT29F512G08CUCABH3-10RZ:A TR positions itself as a high-density, parallel NAND flash option for designs that require 512 Gbit of non-volatile storage in a compact 100‑LBGA form factor. Its combination of MLC NAND technology, defined clocking, and a 2.7 V–3.6 V supply range makes it suitable for systems that need verified electrical and mechanical specifications.
This device is appropriate for engineers and procurement teams seeking a Micron-manufactured parallel NAND flash component with explicit electrical, package, and environmental parameters for integration into commercial-temperature applications.
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