MT29F512G08CUCABH3-10ITZ:A TR
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 67 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10ITZ:A TR – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10ITZ:A TR is a 512 Gbit non-volatile NAND Flash memory device using MLC architecture and organized as 64G × 8. It provides parallel memory access with a 100 MHz clock and operates from a 2.7 V to 3.6 V supply.
Packaged in a 100‑lead LBGA (12 × 18 mm) and rated for ambient operation from −40°C to 85°C, this device is suited to designs that require high-density parallel NAND Flash storage in a compact BGA footprint.
Key Features
- Memory Core 512 Gbit capacity using NAND Flash MLC technology; memory organized as 64G × 8 for high-density storage.
- Interface and Performance Parallel memory interface with a 100 MHz clock frequency for synchronous parallel access.
- Power Single supply operation across a 2.7 V to 3.6 V range, supporting common 3.0 V system rails.
- Package 100‑lead LBGA with a 12 × 18 mm footprint, intended for BGA surface mounting.
- Environmental Range Operating ambient temperature range from −40°C to 85°C (TA) for extended temperature applications.
- Memory Format Non-volatile NAND Flash provided in a parallel memory format for direct memory mapping.
Unique Advantages
- High storage density: 512 Gbit capacity enables large data storage within a single device footprint.
- Parallel access: Parallel interface with 100 MHz clock facilitates integration into systems that use parallel memory buses.
- Flexible power range: 2.7 V to 3.6 V supply supports integration with standard 3.0 V systems.
- Compact BGA package: 100‑LBGA (12 × 18 mm) balances high density with a compact board footprint.
- Extended operating temperature: −40°C to 85°C ambient rating supports deployment in a wide range of thermal environments.
Why Choose IC FLASH 512GBIT PAR 100LBGA?
The MT29F512G08CUCABH3-10ITZ:A TR combines high-density MLC NAND Flash storage with a parallel interface and a compact 100‑lead LBGA package, offering a straightforward path to large-capacity non-volatile memory in space-constrained designs. Its 2.7 V–3.6 V supply range and −40°C to 85°C ambient rating make it suitable for systems that require robust voltage tolerance and extended temperature operation.
This device is appropriate for designers and procurement teams seeking a single-device solution for high-capacity parallel NAND Flash needs, where board area and a BGA mounting are priorities. Its specification set supports predictable integration into systems that require large non-volatile memory arrays with parallel access.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F512G08CUCABH3-10ITZ:A TR.
