MT29F512G08CUAAAC5:A
| Part Description |
IC FLASH 512GBIT PARALLEL 52VLGA |
|---|---|
| Quantity | 500 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 52-VLGA (18x14) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 52-VLGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUAAAC5:A – IC FLASH 512GBIT PARALLEL 52VLGA
The MT29F512G08CUAAAC5:A is a 512 Gbit non-volatile FLASH memory device implemented as NAND (MLC) technology with a parallel memory interface. It provides high-density storage in a 52-VLGA (18×14) package and operates from a 2.7 V to 3.6 V supply.
This device is intended for systems that require large-capacity parallel FLASH memory with defined operating conditions, including an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile FLASH memory using NAND (MLC) technology, suitable for multi-level cell storage requirements.
- Capacity & Organization 512 Gbit total capacity organized as 64G × 8 for straightforward bus mapping and addressing.
- Interface Parallel memory interface for integration into parallel bus systems.
- Voltage Supply Single-supply operation from 2.7 V to 3.6 V.
- Package 52-VLGA package (18 × 14 mm) offering a compact footprint for board-level integration.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
Unique Advantages
- High-density storage: 512 Gbit capacity supports large data storage needs within a single package footprint.
- Parallel interface: Enables integration into systems that use parallel memory buses without protocol conversion.
- MLC NAND technology: Multi-level cell FLASH provides the specified large capacity in a compact device.
- Compact package: 52-VLGA (18×14) package minimizes board area while housing high memory density.
- <strong_Wide supply range: Operation across 2.7 V to 3.6 V accommodates common 3 V system rails.
Why Choose MT29F512G08CUAAAC5:A?
The MT29F512G08CUAAAC5:A is positioned as a high-density, parallel NAND FLASH memory device that provides 512 Gbit of non-volatile storage in a compact 52-VLGA package. Its MLC NAND architecture and 64G × 8 organization make it suitable for designs that require substantial on-board storage with a parallel memory interface and a 2.7 V–3.6 V supply.
With a specified ambient operating range of 0°C to 70°C, this device fits applications with standard commercial temperature requirements where a compact, high-capacity FLASH solution is needed.
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