MT29F512G08CMECBH7-12:C TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 937 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMECBH7-12:C TR – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMECBH7-12:C TR is a 512 Gbit non-volatile NAND flash memory device using MLC (multi-level cell) technology. It is organized as 64G × 8 with a parallel memory interface and operates from a 2.7 V to 3.6 V supply.
Designed for high-density parallel flash storage, the device is supplied in a 152‑TBGA (14×18) package, supports an 83 MHz clock frequency, and is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Core 512 Gbit NAND flash implemented with MLC technology, organized as 64G × 8 for high-density storage.
- Interface Parallel memory interface supporting an 83 MHz clock frequency for synchronous access patterns.
- Voltage Supply Operates from 2.7 V to 3.6 V, enabling use with standard 3.3 V systems.
- Package Supplied in a 152‑TBGA (14×18) package for compact board-level integration.
- Operating Temperature Specified for 0°C to 70°C ambient temperature (TA).
- Memory Format & Mounting Non-volatile FLASH NAND in a parallel format intended for board-mounted applications.
Unique Advantages
- High-density storage: The 512 Gbit capacity provides significant on-board storage in a single device.
- Parallel interface with defined clock: The 83 MHz clock and parallel organization support synchronized parallel access schemes.
- Standard voltage operation: 2.7 V–3.6 V supply range aligns with common 3.3 V system rails.
- Compact TBGA package: The 152‑TBGA (14×18) package offers a small footprint for space-constrained designs.
- MLC NAND technology: Multi-level cell implementation provides the specified density within the device.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMECBH7-12:C TR positions itself as a high-density parallel NAND flash option for designs that require a single-device 512 Gbit storage solution in a compact 152‑TBGA package. Its 64G × 8 organization, MLC technology, and 83 MHz clock frequency make it suitable where parallel flash integration and standard 3.3 V system compatibility are priorities.
This device is suited to engineers and procurement teams specifying non-volatile parallel flash with defined electrical and mechanical parameters, including a 0°C to 70°C operating range and a 2.7 V–3.6 V supply window, offering a clear, verifiable component choice for board-level integration.
For pricing, availability, or to request a quote, please contact sales to submit a request for this MT29F512G08CMECBH7-12:C TR device.
