MT29F512G08CMEABH7-12IT:A TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 273 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMEABH7-12IT:A TR – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMEABH7-12IT:A TR is a 512 Gbit non-volatile NAND flash memory device using MLC architecture and a parallel memory interface. It is organized as 64G x 8 and operates from a 2.7 V to 3.6 V supply with a clock frequency of 83 MHz.
This device is provided in a 152-TBGA (14×18) package and supports an operating ambient temperature range of −40°C to 85°C, offering high-density, board-mountable flash storage for systems that require parallel NAND memory in compact BGA packaging.
Key Features
- Memory Architecture: 512 Gbit NAND flash using MLC technology, organized as 64G × 8 to provide high-density non-volatile storage.
- Interface & Performance: Parallel memory interface with a specified clock frequency of 83 MHz for synchronous operation with parallel bus designs.
- Supply Voltage: Operates from 2.7 V to 3.6 V, compatible with common 3.3 V system rails.
- Package: 152-TBGA (14 × 18) ball-grid array package suitable for compact PCB integration.
- Operating Temperature: Rated for −40°C to 85°C (TA), supporting a wide ambient temperature range for many embedded environments.
- Non-Volatile Storage: FLASH memory format providing persistent data retention when power is removed.
Unique Advantages
- High storage density: 512 Gbit capacity enables large amounts of non-volatile data storage in a single device.
- Parallel interface compatibility: Parallel memory organization and 83 MHz clock support integration into designs using parallel NAND architectures.
- Wide supply voltage range: 2.7 V to 3.6 V operation allows use with typical 3.3 V systems and provides tolerance for supply variation.
- Compact BGA footprint: 152-TBGA (14×18) package offers a space-efficient solution for high-density flash on PCBs.
- Extended ambient range: −40°C to 85°C operating temperature supports deployment across a broad range of environmental conditions.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMEABH7-12IT:A TR positions itself as a high-density, parallel NAND flash option from Micron Technology Inc., combining MLC storage technology, a parallel interface, and a compact 152-TBGA package. Its electrical and thermal specifications (2.7–3.6 V and −40°C to 85°C) make it suitable for designs requiring substantial non-volatile capacity in a board-mountable BGA form factor.
This device is well suited to engineers and procurement teams specifying parallel NAND flash where capacity, packaging density, and defined supply/temperature limits are primary selection criteria. Sourcing this Micron NAND part provides a clear, spec-driven option for systems needing 512 Gbit of persistent storage.
Request a quote or submit an inquiry to obtain pricing and availability for the MT29F512G08CMEABH7-12IT:A TR.
