MT29F512G08CMCEBJ4-37ITR:E TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 240 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 267 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | PENDING ECCN | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCEBJ4-37ITR:E TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08CMCEBJ4-37ITR:E TR is a 512 Gbit parallel NAND flash memory device manufactured by Micron Technology Inc. It implements MLC NAND flash technology in a 64G × 8 organization and is provided in a 132‑VBGA (12×18) package.
Designed for systems that require high-density, non-volatile parallel flash storage, the device offers a 267 MHz clock rate and operates over a wide voltage range of 2.7 V to 3.6 V and a temperature range of -40°C to 85°C.
Key Features
- Memory Core Non-volatile NAND flash (MLC) with a memory organization of 64G × 8 and a total capacity of 512 Gbit.
- Interface & Performance Parallel memory interface with a specified clock frequency of 267 MHz for parallel operation.
- Power Supports a supply voltage range of 2.7 V to 3.6 V to match common system rails.
- Package & Mounting 132‑VBGA package (12×18) for surface-mount integration into board-level designs.
- Environment Operating ambient temperature range from -40°C to 85°C (TA) for use in temperature-challenging deployments.
- Form Factor Standard flash memory format in a high-density BGA package suitable for compact assemblies.
Typical Applications
- Embedded storage subsystems — Provides large-capacity parallel NAND storage for embedded devices that require non-volatile memory.
- Industrial equipment — Suitable for equipment operating across -40°C to 85°C where high-density flash is required.
- Consumer electronics — Can be used in consumer products that implement parallel flash memory architectures and require substantial storage capacity.
Unique Advantages
- High-density capacity: 512 Gbit of NAND flash reduces device count for large storage requirements.
- Parallel interface performance: 267 MHz clock frequency for parallel operation supports system designs that rely on parallel flash access.
- Wide voltage compatibility: 2.7 V to 3.6 V supply range aligns with common system power rails.
- Extended temperature range: -40°C to 85°C operation addresses thermal requirements for many industrial and embedded applications.
- Compact BGA package: 132‑VBGA (12×18) enables high-density board-level integration.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
As a Micron-manufactured 512 Gbit parallel NAND flash device, the MT29F512G08CMCEBJ4-37ITR:E TR combines high storage density, a parallel interface with a defined 267 MHz clock, and a compact 132‑VBGA package to meet design needs for large-capacity non-volatile memory. Its 2.7 V–3.6 V supply range and -40°C to 85°C operating temperature make it suitable for a range of embedded and industrial applications.
This device is well suited for engineers and procurement teams specifying high-density parallel NAND flash where board space, operating temperature, and supply voltage compatibility are key considerations.
Request a quote or submit an inquiry to receive pricing and availability information for the MT29F512G08CMCEBJ4-37ITR:E TR.
