MT29F512G08CMCCBH7-6R:C TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 553 Available (as of May 26, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCCBH7-6R:C TR – 512 Gbit Parallel NAND Flash (152‑TBGA)
The MT29F512G08CMCCBH7-6R:C TR is a 512 Gbit non-volatile NAND flash memory device built on MLC (Multi-Level Cell) technology. It implements a 64G × 8 memory organization with a parallel memory interface and operates from a 2.7 V to 3.6 V supply.
With a 152‑TBGA (14×18) package, a 166 MHz clock frequency rating, and an ambient operating range of 0°C to 70°C, this device is intended for applications that require high-density parallel flash storage in a compact BGA form factor.
Key Features
- Memory Technology MLC NAND flash (FLASH - NAND (MLC)) providing 512 Gbit of non-volatile storage.
- Memory Organization Organized as 64G × 8, suitable for parallel data access patterns.
- Interface and Performance Parallel memory interface with a clock frequency specification of 166 MHz for synchronous operation.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting common 3.3 V systems.
- Package 152‑TBGA (14×18) BGA package for compact board-level integration and high-density mounting.
- Operating Temperature Ambient temperature range 0°C to 70°C (TA).
Typical Applications
- High‑density storage systems — Used where 512 Gbit of non-volatile NAND flash in a parallel interface is required for data storage.
- Embedded memory solutions — Integration in compact designs that need a 152‑TBGA package and parallel flash memory organization.
- Board-level flash replacement — Suitable for designs migrating to higher-density parallel NAND devices while retaining parallel interfaces.
Unique Advantages
- Large storage capacity: 512 Gbit of NAND flash enables consolidation of large datasets into a single device, reducing board-level component count.
- Compact BGA footprint: 152‑TBGA (14×18) package provides high-density mounting for space-constrained designs.
- Parallel interface support: Parallel memory interface and 64G × 8 organization facilitate straightforward integration with parallel bus architectures.
- Standard voltage range: 2.7 V to 3.6 V supply range aligns with common 3.3 V system rails for simplified power design.
- Defined operating range: 0°C to 70°C ambient rating provides clear environmental limits for system design and thermal planning.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMCCBH7-6R:C TR positions itself as a high-density, parallel NAND flash device combining 512 Gbit capacity, MLC technology, and a compact 152‑TBGA package. Its specified clock frequency, voltage range, and memory organization provide predictable electrical and functional characteristics for system architects and hardware designers.
This device is suited for designs that require large non-volatile storage in a compact BGA form factor with a parallel interface. Its clear electrical and thermal specifications support straightforward integration, scalability of storage, and consistent behavior across supported operating conditions.
Request a quote or submit a sales inquiry to receive pricing, availability, and ordering information for the MT29F512G08CMCCBH7-6R:C TR.
