MT29F512G08CMCCBH7-6ITR:C
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 606 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCCBH7-6ITR:C – 512Gbit Parallel NAND Flash, 152-TBGA
The MT29F512G08CMCCBH7-6ITR:C is a 512 Gbit non-volatile FLASH memory device using NAND MLC technology. It is organized as 64G × 8 and implements a parallel memory interface for system integration.
Designed for applications that require high-density parallel flash storage, the device provides a 166 MHz clock frequency, a 2.7 V–3.6 V supply range, and an operating temperature range of −40°C to 85°C, all packaged in a 152-TBGA (14×18) footprint.
Key Features
- Memory Type & Capacity
512 Gbit non-volatile FLASH memory organized as 64G × 8. - Technology
NAND FLASH using MLC (Multi-Level Cell) architecture. - Interface
Parallel memory interface for direct parallel access. - Performance
Clock frequency specified at 166 MHz to support device timing requirements. - Power
Operating supply voltage range of 2.7 V to 3.6 V. - Package
152-TBGA package with a 14×18 mm footprint for compact board-level integration. - Environmental Range
Operating temperature range of −40°C to 85°C (TA).
Unique Advantages
- High density storage: 512 Gbit capacity enables large embedded data storage in a single device.
- Parallel interface: Parallel memory organization (64G × 8) facilitates direct parallel access and system integration where parallel bus architectures are used.
- Wide voltage support: 2.7 V–3.6 V supply range accommodates common 3 V system power rails.
- Industrial temperature range: −40°C to 85°C operating range supports deployment across varied thermal environments.
- Compact TBGA footprint: 152-TBGA (14×18) package helps optimize board area for high-density designs.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
This Micron 512 Gbit parallel NAND FLASH device balances high storage density with a compact 152-TBGA package and a robust operating range, making it suitable for designs that require non-volatile, high-capacity parallel memory. The combination of MLC NAND technology, a 166 MHz clocking spec, and a 2.7 V–3.6 V supply range provides clear electrical parameters for system design and integration.
The device is appropriate for engineers and procurement teams specifying high-density parallel flash where package footprint, supply voltage compatibility, and operating temperature range are primary selection criteria.
For pricing, availability, or to request a quote or submit an RFQ for MT29F512G08CMCCBH7-6ITR:C, please reach out through your procurement channel or vendor contact to obtain detailed commercial information.
