MT29F512G08CMCBBH7-6R:B TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 2 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCBBH7-6R:B TR – 512Gbit Parallel NAND Flash, 152-TBGA
The MT29F512G08CMCBBH7-6R:B TR is a 512 Gbit non-volatile FLASH memory device implementing NAND (MLC) technology. It is organized as 64G × 8 and provides a parallel memory interface with a clock frequency of 166 MHz.
This device targets designs that require high-density parallel NAND storage in a compact 152‑TBGA (14 × 18) package, operating from a 2.7 V to 3.6 V supply and specified for an ambient temperature range of 0 °C to 70 °C.
Key Features
- Memory Core 512 Gbit total capacity using NAND (MLC) FLASH technology organized as 64G × 8.
- Interface & Performance Parallel memory interface with a 166 MHz clock frequency for synchronous operation.
- Voltage Supply Operates from a 2.7 V to 3.6 V supply range to accommodate common system power rails.
- Package 152‑TBGA package (14 × 18 mm) for compact board-level integration.
- Operating Temperature Specified for ambient operation from 0 °C to 70 °C (TA).
- Memory Format Non-volatile FLASH memory suitable for persistent data and code storage.
Typical Applications
- Embedded storage systems — Persistent data and firmware storage where high-density parallel NAND is required.
- Solid‑state storage controllers — Use as parallel NAND capacity in controller-based storage designs.
- Compact board-level designs — High-capacity flash in a 152‑TBGA package for space-constrained electronics.
Unique Advantages
- High-density storage: 512 Gbit capacity allows consolidation of large data or firmware image storage into a single device.
- Parallel interface: Parallel memory organization (64G × 8) supports straightforward bus-oriented integration in compatible systems.
- Standardized clocking: 166 MHz clock frequency provides a defined synchronous timing reference for system design.
- Wide supply tolerance: 2.7 V to 3.6 V supply range facilitates integration with common 3 V system rails.
- Compact package footprint: 152‑TBGA (14 × 18) offers a compact form factor for high-density board layouts.
- Specified operating range: Rated for 0 °C to 70 °C ambient operation to match typical commercial applications.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
IC FLASH 512GBIT PAR 152TBGA delivers a high-capacity, parallel NAND flash option designed for compact system integration. Its 512 Gbit MLC architecture, 64G × 8 organization, and 166 MHz clock rate make it suitable for designs that require dense, non-volatile storage with synchronous parallel access.
This device is appropriate for engineers and procurement teams specifying a 152‑TBGA packaged flash part with a 2.7 V–3.6 V supply and a commercial operating range (0 °C to 70 °C). It provides a clear specification set for systems emphasizing capacity, compact packaging, and standard voltage compatibility.
Request a quote or contact sales to discuss availability, pricing, and lead times for MT29F512G08CMCBBH7-6R:B TR.
