MT29F512G08CMCABH7-6R:A
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 794 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCABH7-6R:A – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMCABH7-6R:A is a 512 Gbit non-volatile flash memory device using NAND MLC technology. It is organized as 64G x 8 with a parallel memory interface and a 166 MHz clock reference.
Designed for systems requiring high-density parallel flash storage, the device integrates a compact 152-TBGA (14x18) package and operates from a 2.7 V to 3.6 V supply with an operating temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile FLASH implemented as NAND MLC for multi-level cell storage.
- Organization & Capacity Memory organized as 64G x 8, providing a total capacity of 512 Gbit.
- Interface & Performance Parallel memory interface with a 166 MHz clock frequency for device timing.
- Voltage Supply Operates from 2.7 V to 3.6 V, compatible with common system supply rails.
- Package Supplied in a 152-TBGA package (14x18) for dense board-level integration.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
Unique Advantages
- High-density storage: 512 Gbit capacity in a single device reduces the need for multiple components to achieve large non-volatile storage.
- Parallel interface compatibility: Parallel memory interface supports designs that utilize parallel flash architectures.
- Compact package: 152-TBGA (14x18) package enables high-density board layouts and efficient use of PCB area.
- Flexible power range: 2.7 V to 3.6 V supply range allows integration with a variety of system power domains.
- Defined operating range: Specified 0°C to 70°C ambient rating supports applications within typical commercial temperature envelopes.
- Consistent memory organization: 64G x 8 architecture provides a clear mapping for system memory planning.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMCABH7-6R:A positions itself as a high-capacity, parallel NAND flash option for designs that require substantial non-volatile storage in a compact package. Its combination of 512 Gbit capacity, parallel interface, and 152-TBGA packaging makes it suitable for systems that prioritize board-density and established parallel memory architectures.
Backed by Micron Technology Inc., this device is appropriate for customers seeking a single-device solution for large-capacity non-volatile memory needs, with clear electrical and thermal operating parameters for system integration and procurement planning.
Request a quote or contact sales for pricing, lead time, and availability for the MT29F512G08CMCABH7-6R:A.
