MT29F512G08CKECBH7-12:C TR

The MT29F512G08CKECBH7-12:C TR is a 512 Gbit non-volatile FLASH memory device based on NAND (MLC) technology with a parallel memory interface. It provides a high-density memory organization (64G x 8) in a 152-TBGA (14×18) package.

This device is suited for systems that require parallel NAND storage with a defined operating range and supply voltage, offering a compact package form factor and a specified clock frequency for timing integration.

Key Features

• Memory Core 512 Gbit capacity using FLASH - NAND (MLC) technology with a memory organization of 64G × 8 for high-density storage.
• Interface & Timing Parallel memory interface with a clock frequency specification of 83 MHz for synchronous timing integration.
• Voltage & Power Operates from a 2.7 V to 3.6 V supply range, enabling use with common single-supply memory power rails.
• Package & Mounting Supplied in a 152-TBGA package (14×18) optimized for board-level mounting and compact footprint requirements.
• Environmental Rated for an operating temperature range of 0°C to 70°C (TA).
• Non-Volatile Storage FLASH memory format provides persistent data retention suitable for firmware and mass storage functions.

Typical Applications

• Embedded storage and firmware — Use as non-volatile program and data storage where parallel NAND is required for system boot or large firmware images.
• Consumer electronics — Integration into products that need high-density flash in a compact TBGA package with standard supply voltage compatibility.
• Industrial systems — Storage for control, configuration, or logging data within the device's 0°C to 70°C operating temperature window.

Unique Advantages

• High-density capacity: 512 Gbit storage enables consolidation of large code images and data sets in a single device.
• Parallel interface compatibility: Parallel memory interface and 83 MHz clocking simplify integration with systems designed for parallel NAND.
• Flexible power range: 2.7 V to 3.6 V operation aligns with common memory supply rails, easing power-system design.
• Compact TBGA packaging: 152-TBGA (14×18) package provides a space-efficient solution for board-level deployments.
• MLC NAND technology: FLASH - NAND (MLC) balances density and storage efficiency for capacity-focused designs.

Why Choose IC FLASH 512GBIT PAR 152TBGA?

The MT29F512G08CKECBH7-12:C TR combines 512 Gbit MLC NAND capacity, a parallel interface, and a compact 152-TBGA footprint to address applications that require substantial non-volatile storage in a board-friendly form factor. Its defined operating voltage range and temperature rating make it suitable for designs that need predictable electrical and environmental characteristics.

This Micron Technology device is appropriate for designers and procurement teams targeting high-density parallel flash solutions for embedded systems, consumer devices, and industrial equipment where the specified package, voltage, and temperature parameters meet system requirements.

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