MT29F512G08CMCABH7-6C:A
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 302 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCABH7-6C:A – 512 Gbit Parallel NAND Flash, 152-TBGA
The MT29F512G08CMCABH7-6C:A is a 512 Gbit non-volatile NAND flash memory device using Multi-Level Cell (MLC) technology. It is organized as 64G x 8 and provides parallel memory interface connectivity in a compact 152-TBGA (14 × 18 mm) package.
This device targets applications that require high-density non-volatile storage in a compact BGA form factor. Key device attributes include its parallel interface, MLC NAND architecture, operating voltage range of 2.7 V to 3.6 V, and an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Core 512 Gbit NAND flash organized as 64G × 8 using Multi-Level Cell (MLC) technology.
- Interface Parallel memory interface suitable for parallel flash system architectures.
- Clock Supports a clock frequency of 166 MHz.
- Power Operating voltage range from 2.7 V to 3.6 V to match common system supply rails.
- Package 152-TBGA package (14 × 18 mm) for compact board-level integration.
- Operating Conditions Designed for ambient operating temperatures from 0°C to 70°C (TA).
Typical Applications
- Embedded storage modules — High-density non-volatile storage for embedded devices that use parallel NAND flash memory.
- Compact storage assemblies — Integration into compact BGA-based storage modules where board space is constrained.
- OEM memory solutions — Use in original equipment manufacturer designs requiring a 512 Gbit MLC parallel flash component.
Unique Advantages
- Large 512 Gbit capacity: Provides substantial non-volatile storage capacity in a single device, enabled by 64G × 8 organization.
- Parallel interface: Supports parallel memory architectures, facilitating integration with systems designed for parallel flash.
- Compact BGA package: 152-TBGA (14 × 18 mm) package reduces board footprint for space-constrained designs.
- MLC NAND technology: Multi-Level Cell architecture delivers the specified density within the device footprint.
- Flexible power range: Operates from 2.7 V to 3.6 V to accommodate common system power domains.
- Defined operating temperature: Rated for ambient operation from 0°C to 70°C, aligning with commercial temperature environments.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMCABH7-6C:A combines high-density 512 Gbit MLC NAND flash with a parallel interface and a compact 152-TBGA package, making it suitable for designs that require substantial non-volatile storage in a small footprint. Its electrical and thermal specifications—2.7 V to 3.6 V supply and 0°C to 70°C operating range—provide clear integration parameters for system designers.
This device is appropriate for customers developing embedded storage solutions, compact storage modules, or OEM memory assemblies that need a defined, high-density parallel NAND option. Its specification set supports predictable implementation and straightforward board-level integration.
If you need pricing, availability, or to request a quote for MT29F512G08CMCABH7-6C:A, please contact sales to discuss requirements and lead times.
