MT29F512G08CKECBH7-12:C

The MT29F512G08CKECBH7-12:C is a 512 Gbit non-volatile FLASH NAND memory organized as 64G × 8 with a parallel memory interface. Packaged in a 152-TBGA (14×18) form factor, it provides high-density parallel storage for systems that require on-board NAND flash capacity.

Key attributes include Multi-Level Cell (MLC) NAND technology, a specified clock frequency of 83 MHz, an operating temperature range of 0°C to 70°C, and a supply voltage window of 2.7 V to 3.6 V — enabling integration into designs targeting standard commercial temperature and 3.3 V-class power rails.

Key Features

• Core Memory Technology 
  FLASH - NAND (MLC) non-volatile memory providing 512 Gbit total capacity in a 64G × 8 organization.
• Interface 
  Parallel memory interface with a specified clock frequency of 83 MHz for system integration with parallel bus architectures.
• Power 
  Operates from a 2.7 V to 3.6 V supply range suitable for 3.3 V-class designs.
• Package and Footprint 
  152-TBGA package (14×18) offering a compact ball-grid array footprint for high-density board layouts.
• Operating Conditions 
  Rated for commercial operating temperatures from 0°C to 70°C (TA).
• Memory Format 
  Flash memory format optimized for non-volatile data storage in embedded and board-level applications.

Typical Applications

• High-density non-volatile storage 
  Provides 512 Gbit of NAND flash capacity for systems requiring large on-board data storage in a parallel interface format.
• Embedded systems 
  Suitable for embedded designs that integrate parallel flash memory in a compact 152-TBGA package.
• Board-level memory expansion 
  Used where a parallel NAND flash device with defined clocking (83 MHz) and 3.3 V-class supply is required.

Unique Advantages

• High storage density: 512 Gbit capacity supports large local data sets without external storage components.
• Parallel interface at defined clock rate: 83 MHz clocking simplifies timing planning for parallel bus implementations.
• Compact TBGA packaging: 152-TBGA (14×18) reduces board area for high-density layouts.
• Standard supply voltage range: 2.7 V–3.6 V compatibility with common 3.3 V system rails.
• Commercial temperature rating: 0°C–70°C operation aligns with common commercial applications and environments.

Why Choose IC FLASH 512GBIT PAR 152TBGA?

MT29F512G08CKECBH7-12:C positions itself as a high-capacity, parallel-interface NAND flash device for designs that require 512 Gbit of non-volatile storage in a compact TBGA package. Its MLC NAND architecture, defined 83 MHz clocking, and 2.7 V–3.6 V supply range make it suitable for integration into commercial-temperature embedded and board-level systems where on-board parallel flash is needed.

Choose this device when your design priorities include maximizing on-board NAND capacity while maintaining a compact footprint and compatibility with standard 3.3 V-class power domains; the package and electrical specifications support straightforward integration into such systems.

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