MT29F512G08CKCABH7-6R:A
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 1,042 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CKCABH7-6R:A – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CKCABH7-6R:A from Micron Technology Inc. is a 512 Gbit non-volatile FLASH NAND (MLC) memory device organized as 64G × 8. It provides parallel memory access with a 166 MHz clock and is supplied in a 152‑TBGA (14×18) package.
This device is intended for systems that require high-density parallel NAND flash storage within a compact package and within the specified operating range of 0°C to 70°C and a supply voltage of 2.7 V to 3.6 V.
Key Features
- Core Memory Technology FLASH - NAND (MLC) non-volatile memory delivering 512 Gbit capacity.
- Memory Organization Organized as 64G × 8 to support high-density memory mapping.
- Interface & Timing Parallel memory interface with a 166 MHz clock frequency for parallel access timing.
- Supply Voltage Operates from 2.7 V to 3.6 V to match common system power rails.
- Package 152‑TBGA (14×18) package for space-efficient board-level integration.
- Operating Temperature Rated for 0°C to 70°C (TA).
Typical Applications
- Embedded storage High-density non-volatile memory for embedded systems requiring parallel NAND flash.
- Consumer electronics Large-capacity FLASH in a compact TBGA footprint for space-constrained devices.
- Industrial equipment Integration where the 0°C–70°C operating range and 2.7 V–3.6 V supply meet system requirements.
Unique Advantages
- High-density capacity: 512 Gbit in a single device reduces the number of components needed for large storage requirements.
- Parallel interface support: Parallel memory interface with 166 MHz clock facilitates integration into parallel-memory architectures.
- Flexible power range: 2.7 V–3.6 V supply range provides compatibility with multiple system power rails.
- Compact TBGA packaging: 152‑TBGA (14×18) minimizes board footprint for high-density layouts.
- Commercial temperature rating: Specified 0°C–70°C operating range for commercial-grade applications.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CKCABH7-6R:A delivers high-density MLC NAND flash capacity in a compact 152‑TBGA package with a parallel interface and defined operating parameters. Its combination of 512 Gbit organization, 166 MHz clocking, and 2.7 V–3.6 V supply range makes it suitable for designs that require large non-volatile storage in a space-constrained footprint.
Produced by Micron Technology Inc., this device is targeted at designers and procurement teams specifying parallel NAND flash where the documented capacity, package, electrical and thermal specifications align with system requirements.
Request a quote or contact sales to obtain pricing and availability for MT29F512G08CKCABH7-6R:A.
