MT29F512G08CKCABH7-6:A

The MT29F512G08CKCABH7-6:A is a 512 Gbit non-volatile memory device implemented as NAND flash (MLC) with a parallel interface and 64G × 8 organization. It is supplied in a 152‑TBGA (14×18) package and operates over a 2.7 V to 3.6 V supply range.

Designed for systems that require high-density parallel NAND flash, the device offers a specified clock frequency of 166 MHz and an ambient operating temperature range of 0°C to 70°C, enabling integration where these electrical and environmental characteristics match system requirements.

Key Features

• Memory Type & Technology Non-volatile FLASH - NAND (MLC) technology providing multi-level cell storage.
• Density & Organization 512 Gbit capacity organized as 64G × 8, enabling large single-device storage.
• Interface & Performance Parallel memory interface with a specified clock frequency of 166 MHz for parallel access architectures.
• Power Operates from 2.7 V to 3.6 V, providing compatibility with a range of supply voltages.
• Package & Mounting 152‑TBGA package (14×18) for board-level integration; mounting type specified as non-volatile (device class).
• Operating Temperature Ambient operating range from 0°C to 70°C for standard temperature applications.
• Memory Format Device is provided in a parallel FLASH memory format suitable for designs requiring parallel NAND flash modules.

Typical Applications

• Data Storage Employed as parallel NAND flash storage where a 512 Gbit non-volatile device is required.
• Firmware and Code Storage Used to store firmware, boot images or large code blocks in systems that accept a parallel flash interface.
• Embedded Systems Integrated into embedded designs that accommodate a 152‑TBGA (14×18) package and require MLC NAND density.

Unique Advantages

• High-density single-device capacity: 512 Gbit of NAND flash enables consolidation of storage requirements into one device.
• Parallel interface with defined clock rate: Supports a 166 MHz clock frequency for parallel access patterns.
• Wide supply voltage range: 2.7 V to 3.6 V operation provides flexibility for systems using different supply rails.
• Compact TBGA packaging: 152‑TBGA (14×18) package offers a consistent footprint for board-level integration.
• Specified operating temperature: Rated for 0°C to 70°C ambient conditions to match temperature requirements for standard applications.

Why Choose IC FLASH 512GBIT PAR 152TBGA?

This device delivers high-density MLC NAND flash in a parallel-interface form factor with a defined 166 MHz clock frequency and a 2.7 V–3.6 V supply range. Its 64G × 8 organization and 152‑TBGA (14×18) package make it suitable for designs that require substantial non-volatile storage within that package and electrical envelope.

Choose this part for projects and product lines that need a single-device 512 Gbit parallel NAND solution with clear operational specifications for voltage and ambient temperature, simplifying selection and board-level integration where those parameters apply.

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