MT29F512G08CKCABK7-6:A
| Part Description |
IC FLASH 512GBIT PARALLEL 166MHZ |
|---|---|
| Quantity | 1,703 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CKCABK7-6:A – IC FLASH 512GBIT PARALLEL 166MHZ
The MT29F512G08CKCABK7-6:A is a 512 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements FLASH NAND (MLC) memory organized as 64G × 8 with a parallel memory interface and a 166 MHz clock.
This device targets systems requiring high-density parallel flash storage with a 2.7 V to 3.6 V supply range and an operating ambient temperature of 0°C to 70°C.
Key Features
- Memory Core Non-volatile FLASH NAND (MLC) technology providing 512 Gbit raw storage capacity.
- Organization Memory organized as 64G × 8 to support parallel data structures and addressing.
- Interface & Performance Parallel memory interface with a 166 MHz clock frequency for synchronous operation with parallel host systems.
- Power Operates from a 2.7 V to 3.6 V supply, enabling compatibility with common 3 V system rails.
- Environmental Rated for operation in ambient temperatures from 0°C to 70°C (TA).
Typical Applications
- Parallel NAND flash storage — Provides 512 Gbit of non-volatile storage for designs requiring a parallel memory interface and high density.
- High-density data arrays — The 64G × 8 organization supports implementations that aggregate NAND die for larger storage modules.
- Embedded systems with 3 V rails — Suitable for systems operating within a 2.7 V to 3.6 V supply range and 0°C to 70°C ambient conditions.
Unique Advantages
- High storage density: 512 Gbit capacity enables increased on-board non-volatile storage without additional devices.
- Parallel-interface performance: 166 MHz clocked parallel interface supports synchronous operation with parallel host systems.
- MLC NAND technology: FLASH NAND (MLC) provides a multi-level cell memory architecture for efficient data storage density.
- Wide supply compatibility: 2.7 V to 3.6 V operating range aligns with common system power rails.
- Specified operating range: Ambient operating temperature specified from 0°C to 70°C for standard-temperature applications.
Why Choose IC FLASH 512GBIT PARALLEL 166MHZ?
The MT29F512G08CKCABK7-6:A offers a straightforward solution for designs that need high-density parallel NAND flash storage with specified operating voltage and temperature ranges. Its 64G × 8 organization and 512 Gbit capacity provide a compact option for increasing non-volatile memory without changing system architecture.
Manufactured by Micron Technology Inc., this device is suitable for engineers and procurement teams specifying parallel FLASH NAND (MLC) memory in systems with 2.7 V–3.6 V supply rails and ambient temperature requirements of 0°C to 70°C.
Request a quote or submit an inquiry to obtain pricing, lead times, and availability for the MT29F512G08CKCABK7-6:A.
