MT29F512G08CKCABH7-6:A TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 520 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CKCABH7-6:A TR – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CKCABH7-6:A TR is a 512 Gbit non-volatile NAND flash memory device by Micron Technology Inc., implemented in MLC (multi-level cell) technology. It provides parallel memory interface operation with a 64G × 8 organization and is supplied in a 152‑TBGA (14×18) package.
Designed for systems requiring dense, parallel flash storage, this device operates from a 2.7 V to 3.6 V supply and supports a clock frequency of 166 MHz, with an operating ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile NAND flash using MLC (multi-level cell) technology for multi-bit-per-cell storage.
- Capacity & Organization 512 Gbit total capacity with a 64G × 8 memory organization to support high-density storage requirements.
- Interface & Performance Parallel memory interface with a clock frequency specification of 166 MHz for synchronous operations.
- Voltage Range Operates from 2.7 V to 3.6 V supply voltage, supporting common system power rails.
- Package Supplied in a 152‑TBGA (14×18) package for compact board-level integration.
- Operating Temperature Ambient operating range of 0°C to 70°C (TA) for standard commercial-temperature applications.
Unique Advantages
- High-density storage: 512 Gbit capacity enables substantial on-board non-volatile data storage within a single device.
- Parallel interface throughput: Parallel memory organization with a 166 MHz clock supports synchronous parallel access patterns.
- Compact TBGA package: The 152‑TBGA (14×18) package minimizes board area for space-constrained designs.
- Flexible supply range: 2.7 V to 3.6 V operation aligns with common system power domains for easier integration.
- MLC NAND technology: Multi-level cell architecture increases bits per cell to enhance usable density.
- Commercial temperature fit: 0°C to 70°C operating range supports standard commercial applications.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The IC FLASH 512GBIT PAR 152TBGA delivers a high-density, parallel NAND flash memory option well suited to designs requiring a 512 Gbit non-volatile store in a compact 152‑TBGA package. Its 64G × 8 organization, MLC technology and 166 MHz clock frequency provide a clear specification set for engineers planning board-level flash integration.
This device is appropriate for customers and designs that need significant on-board storage capacity, a parallel interface model, and operation within a 2.7 V–3.6 V supply and 0°C–70°C ambient range. The Micron-specified attributes provide a defined basis for system selection and integration planning.
Request a quote or contact sales to submit a part inquiry and receive pricing and availability information for the MT29F512G08CKCABH7-6:A TR.
