MT29F512G08CKCCBH7-6R:C TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 597 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CKCCBH7-6R:C TR – 512 Gbit NAND Flash, Parallel, 152-TBGA
The MT29F512G08CKCCBH7-6R:C TR is a 512 Gbit non-volatile NAND flash memory device built on MLC (multi-level cell) technology. It is organized as 64G x 8 and presented in a 152-TBGA (14×18) package with a parallel memory interface.
This device is intended for systems requiring high-density, parallel-access flash storage with a 2.7 V to 3.6 V supply range and an operating temperature window of 0°C to 70°C. A 166 MHz clock frequency is specified for interface timing.
Key Features
- Memory Core 512 Gbit capacity implemented as 64G × 8 using NAND flash (MLC) non-volatile technology.
- Interface & Clock Parallel memory interface with a specified clock frequency of 166 MHz.
- Voltage Supply Wide supply range from 2.7 V to 3.6 V.
- Package 152-TBGA package (14×18) for compact board-level integration.
- Operating Temperature Commercial temperature range of 0°C to 70°C (TA).
- Memory Format FLASH memory format with non-volatile storage characteristics.
Unique Advantages
- High-density storage: 512 Gbit capacity delivers large non-volatile storage in a single device.
- Parallel interface support: Parallel memory interface enables direct integration into systems that use parallel NAND architectures.
- MLC technology for increased density: Multi-level cell NAND enables greater bit density within the device footprint.
- Flexible power options: 2.7 V to 3.6 V supply range supports a range of 3 V system power rails.
- Compact TBGA package: 152-TBGA (14×18) package reduces PCB area for high-density board designs.
- Commercial temperature suitability: Rated for 0°C to 70°C operation for standard commercial environments.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CKCCBH7-6R:C TR provides a high-capacity, parallel-interface NAND flash solution in a compact 152-TBGA package. Its 512 Gbit density, MLC architecture, and 64G × 8 organization make it suitable for designs that require substantial non-volatile storage with a parallel access topology.
With a 2.7 V–3.6 V supply window, 166 MHz clock specification, and commercial temperature rating, this device fits applications that need a balance of density, supply flexibility, and compact packaging for space-constrained board designs.
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