MT29F512G08CMCABH7-6:A TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 488 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCABH7-6:A TR – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMCABH7-6:A TR from Micron Technology Inc. is a 512 Gbit non-volatile NAND flash memory device using MLC technology. It is organized as 64G x 8 and provides a parallel memory interface with a clock frequency of 166 MHz.
This device is supplied in a 152‑TBGA (14×18) package, operates from 2.7 V to 3.6 V, and has an ambient operating temperature range of 0°C to 70°C, making it suitable for designs that require high-density parallel NAND flash storage in a compact package.
Key Features
- Memory Core: Non-volatile NAND flash (MLC) technology providing persistent storage without power.
- Density & Organization: 512 Gbit capacity organized as 64G × 8 for high-density storage per device.
- Interface: Parallel memory interface with a clock frequency of 166 MHz for parallel access timing.
- Power Supply: Wide supply range of 2.7 V to 3.6 V to support common 3.3 V-based systems.
- Package: 152-TBGA (14×18) ball grid array offering a compact footprint for board-level integration.
- Operating Temperature: Specified ambient range of 0°C to 70°C (TA) for commercial-temperature applications.
Typical Applications
- Embedded storage systems — Provides 512 Gbit of parallel NAND flash for devices that require non-volatile bulk storage.
- Consumer and commercial electronics — High-density flash in a compact 152‑TBGA package supports space-constrained product designs.
- Board-level memory expansion — Parallel interface and 64G × 8 organization enable integration into parallel-memory architectures.
Unique Advantages
- High storage density: 512 Gbit capacity delivers substantial non-volatile storage within a single device, reducing part count for large-capacity designs.
- Parallel access performance: 166 MHz clock support for the parallel interface facilitates predictable parallel memory timing.
- Flexible power window: 2.7 V to 3.6 V supply range aligns with standard 3.3 V systems for straightforward power integration.
- Compact TBGA footprint: 152‑TBGA (14×18) package minimizes PCB area for dense board layouts.
- Commercial temperature spec: 0°C to 70°C ambient rating provides clear environmental limits for commercial applications.
Why Choose MT29F512G08CMCABH7-6:A TR?
The MT29F512G08CMCABH7-6:A TR positions itself as a high-density parallel NAND flash solution from Micron, combining 512 Gbit capacity, MLC technology, and a compact 152‑TBGA package. Its parallel interface and 166 MHz clocking make it appropriate for systems that require predictable parallel memory timing and significant on-board non-volatile storage.
This device is suited to designers targeting commercial-temperature applications who need a dense, board-mountable NAND flash memory with a 2.7 V to 3.6 V supply range. The combination of capacity, package, and interface supports designs that require consolidated storage capability within a compact footprint.
Request a quote or contact sales to discuss pricing, lead times, and availability for the MT29F512G08CMCABH7-6:A TR.
