MT29F512G08CMCABH7-6:A
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 470 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCABH7-6:A – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMCABH7-6:A is a 512 Gbit non-volatile Flash memory device based on NAND (MLC) technology with a parallel memory interface. It combines high-density storage, a 64G × 8 memory organization and a 152-TBGA package to address designs that require compact, board-level parallel flash memory.
Key Features
- Core Technology NAND Flash (MLC) non-volatile memory providing multi-level cell storage.
- Memory Capacity & Organization 512 Gbit capacity arranged as 64G × 8 for straightforward byte-wide parallel access.
- Interface & Timing Parallel memory interface with a specified clock frequency of 166 MHz to support synchronous parallel operation.
- Voltage Supply Operates from 2.7 V to 3.6 V, compatible with common system power rails.
- Package 152-TBGA (14 × 18) package for compact board-level integration.
- Operating Temperature Commercial temperature range: 0°C to 70°C (TA).
Typical Applications
- Embedded systems Use as board-level parallel non-volatile storage for firmware, code and data in embedded designs.
- Memory modules Integration into memory assemblies and storage sub-systems that require high-density parallel Flash.
- Commercial electronic equipment Suitable for commercial-grade electronics operating within the 0°C to 70°C temperature range.
Unique Advantages
- High-density 512 Gbit capacity: Reduces the number of devices needed to achieve large storage quotas on a board.
- Byte-wide parallel organization (64G × 8): Simplifies interfacing with parallel memory controllers and designs expecting an 8-bit data path.
- MLC NAND technology: Provides multi-level cell storage for increased bit density per die.
- Compact 152-TBGA package (14×18): Enables space-efficient placement on densely populated PCBs.
- Flexible power range (2.7 V–3.6 V): Compatible with common system supply rails, simplifying power delivery design.
- Commercial temperature rating: Specified operation from 0°C to 70°C for standard commercial applications.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMCABH7-6:A provides a compact, high-capacity parallel NAND Flash option for designs that require 512 Gbit of non-volatile storage in a 152-TBGA footprint. Its 64G × 8 organization, MLC technology and 2.7 V–3.6 V supply window make it suitable for board-level integration where byte-wide parallel access and high density are priorities.
This device is well suited to designers of embedded systems, memory modules and commercial electronic equipment who need scalable storage capacity in a space-constrained package while operating within a defined commercial temperature range.
Request a quote or submit an inquiry to discuss pricing, availability and technical suitability for your design requirements.
