MT29F512G08CKCCBH7-6R:C
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 308 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CKCCBH7-6R:C – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CKCCBH7-6R:C is a 512 Gbit non-volatile flash memory device implemented in NAND MLC technology. It is organized as 64G × 8 and provides a parallel memory interface with a specified clock frequency of 166 MHz.
Packaged in a 152-TBGA (14×18) footprint and operating across a 2.7 V to 3.6 V supply range, the device targets applications that require high-density flash storage in a compact package while operating within a 0 °C to 70 °C ambient range.
Key Features
- Memory Capacity — 512 Gbit total storage, organized as 64G × 8 for high-density non-volatile data storage.
- Technology — FLASH - NAND (MLC) technology for multi-level cell storage.
- Interface & Performance — Parallel memory interface with a clock frequency of 166 MHz to support parallel access timing requirements.
- Voltage Supply — Operates from 2.7 V to 3.6 V, enabling use with common 3.0 V system domains.
- Package — 152-TBGA package (14×18) providing a compact ball-grid array footprint for board-level integration.
- Operating Temperature — Specified ambient range of 0 °C to 70 °C.
Unique Advantages
- High-density storage: 512 Gbit capacity supports large on-board data requirements within a single device.
- Compact TBGA package: 152-TBGA (14×18) packaging reduces board area for high-density designs.
- Parallel interface with defined clock: Parallel access and a 166 MHz clock frequency provide predictable timing for system integration.
- Standard supply range: 2.7 V to 3.6 V operation aligns with common system power rails.
- MLC NAND technology: Multi-level cell architecture enables increased storage density per die.
- Clear operating window: Specified 0 °C to 70 °C ambient range supports standard commercial temperature applications.
Why Choose MT29F512G08CKCCBH7-6R:C?
The MT29F512G08CKCCBH7-6R:C is positioned for designs that require a high-density, parallel NAND flash device in a compact 152-TBGA form factor. Its 512 Gbit capacity, MLC technology, and defined electrical and thermal specifications make it suitable for integration where board area and storage density are primary considerations.
With a clear supply voltage range and specified operating temperature, the device provides verifiable parameters for system design and planning, supporting engineers and procurement teams evaluating non-volatile memory options for commercial applications.
Request a quote or contact sales to inquire about pricing, availability, and lead times for the MT29F512G08CKCCBH7-6R:C.
