MT29F512G08CMCBBH7-6C:B
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 1,260 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCBBH7-6C:B – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMCBBH7-6C:B is a 512 Gbit parallel NAND flash memory device based on MLC flash architecture. It provides high-density, non-volatile storage in a compact 152-TBGA (14×18) package for systems that require parallel flash memory integration.
Key electrical and mechanical characteristics include a 166 MHz clock frequency, a 2.7 V to 3.6 V supply range, and an operating ambient temperature range of 0°C to 70°C, making it suitable for general-purpose embedded and storage applications that leverage parallel NAND flash.
Key Features
- Memory Core 512 Gbit NAND flash in MLC (multi-level cell) technology, delivering high-density non-volatile storage.
- Memory Organization Organized as 64G × 8, enabling parallel data access consistent with parallel NAND interfaces.
- Interface & Timing Parallel memory interface with a clock frequency of 166 MHz for synchronized data transfers.
- Power Wide supply voltage range of 2.7 V to 3.6 V to support common system power rails.
- Package 152-TBGA package (14×18) for compact board-level integration and high pin density.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
Unique Advantages
- High-density storage: 512 Gbit capacity provides substantial non-volatile storage in a single device, reducing the need for multiple components.
- Parallel interface implementation: Parallel memory interface and 64G × 8 organization support legacy and parallel-access system architectures.
- MLC NAND technology: Multi-level cell flash balances density and cost for applications requiring higher capacity.
- Flexible supply voltage: 2.7 V to 3.6 V operation aligns with common system power domains for easier integration.
- Compact TBGA package: 152-TBGA (14×18) footprint enables dense board layouts while providing a robust package for high-pin-count connectivity.
- Industrial ambient range: 0°C to 70°C rating supports a broad set of general-purpose embedded environments.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMCBBH7-6C:B positions itself as a high-capacity parallel NAND flash device suitable for designs that require large non-volatile storage in a compact TBGA package. With MLC technology, a 166 MHz clocking capability, and a 2.7 V–3.6 V supply range, it addresses system designs that need dense parallel flash memory while maintaining standard voltage compatibility.
Manufactured by Micron Technology Inc., this device is appropriate for engineering teams and procurement seeking a single-device solution for high-density parallel NAND storage where board space and pin density are considerations. Its specification set supports straightforward integration into systems designed for parallel flash memory.
Request a quote or contact sales to check pricing, lead times, and availability for the MT29F512G08CMCBBH7-6C:B.
