MT29F512G08CMCBBH7-6ITR:B
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 242 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCBBH7-6ITR:B – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMCBBH7-6ITR:B is a 512 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It uses multi-level cell (MLC) NAND architecture organized as 64G × 8 with a parallel memory interface.
Designed for systems that require high-density parallel NAND storage in a compact package, the device supports a 2.7 V–3.6 V supply range, a 166 MHz clock frequency, and an operating temperature range of −40°C to 85°C.
Key Features
- Memory Type and Organization Non-volatile NAND Flash (MLC) organized as 64G × 8 for a total memory size of 512 Gbit.
- Interface and Performance Parallel memory interface with a clock frequency specified at 166 MHz.
- Power Supports a voltage supply range of 2.7 V to 3.6 V.
- Package Available in a 152-TBGA package (14 × 18 mm) for compact board-level integration.
- Operating Temperature Rated for operation from −40°C to 85°C (TA), suitable for environments within that temperature range.
Typical Applications
- Parallel NAND storage systems — Use where parallel-formatted NAND flash is required for high-density non-volatile storage.
- Embedded storage modules — Integrate as 512 Gbit MLC NAND in compact module designs using the 152-TBGA package.
- Industrial temperature designs — Deploy in systems that operate within the specified −40°C to 85°C temperature range.
- 3.3 V systems — Suitable for devices and designs that operate on a 2.7 V–3.6 V supply rail.
Unique Advantages
- High-density capacity: 512 Gbit organization (64G × 8) provides substantial on-board non-volatile storage in a single device.
- Parallel interface flexibility: Parallel memory interface supports integration into systems designed for parallel NAND connectivity.
- Compact TBGA package: 152-TBGA (14 × 18) package enables space-efficient board layouts.
- Wide operating voltage range: Operates from 2.7 V to 3.6 V, accommodating common supply rails in embedded designs.
- Extended temperature support: Rated for −40°C to 85°C to match applications requiring that ambient range.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMCBBH7-6ITR:B positions itself as a high-density, parallel NAND flash option offering 512 Gbit of MLC storage in a compact 152-TBGA package. Its defined electrical and environmental specifications—166 MHz clock frequency, 2.7 V–3.6 V supply, and −40°C to 85°C operating range—make it suitable for designs that require verified, high-capacity parallel NAND memory.
This device is appropriate for design teams and procurement sourcing looking for a Micron-manufactured parallel NAND flash component with clear, specific hardware attributes that support compact integration and operation across a broad temperature and supply range.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F512G08CMCBBH7-6ITR:B.
