MT29F512G08CMCBBH7-6R:B

The MT29F512G08CMCBBH7-6R:B is a 512 Gbit parallel NAND Flash memory device built on MLC (multi-level cell) technology. It provides a 64G × 8 memory organization and a parallel memory interface with a 166 MHz clock frequency.

This device is intended for designs that require large-density non-volatile storage in a compact 152‑TBGA (14×18) package, operating from a 2.7 V to 3.6 V supply and an ambient temperature range of 0°C to 70°C.

Key Features

• Memory Architecture  512 Gbit capacity organized as 64G × 8, using NAND Flash MLC technology for high-density non-volatile storage.
• Interface & Clock  Parallel memory interface with a specified clock frequency of 166 MHz for synchronous parallel operation.
• Voltage Supply  Operates from a 2.7 V to 3.6 V supply range, supporting common board-level power rails.
• Package  152‑TBGA package (14 × 18 mm) for board-level mounting where a compact ball-grid array is required.
• Operating Temperature  Rated for ambient operation from 0°C to 70°C (TA).
• Memory Format  Non-volatile FLASH memory in a parallel format suitable for direct parallel bus integration.

Typical Applications

• High-density non-volatile storage  Provides 512 Gbit of parallel NAND Flash for designs requiring large onboard storage capacity.
• Board-level flash integration  152‑TBGA package and parallel interface support compact board integration where a BGA-mounted memory is needed.
• Parallel-memory system designs  64G × 8 organization and parallel interface enable use in systems designed around parallel NAND Flash architectures.

Unique Advantages

• 512 Gbit capacity:  Substantial non-volatile storage density in a single device reduces the need for multiple memory components.
• Parallel interface at 166 MHz:  Enables synchronous parallel connection to compatible system architectures for predictable timing.
• MLC NAND technology:  Multi-level cell Flash provides higher bit density per memory cell compared to single-level alternatives.
• Wide supply voltage window:  2.7 V to 3.6 V operation accommodates common 3.3 V and related board power domains.
• Compact TBGA packaging:  152‑TBGA (14×18) offers a space-efficient footprint for high-density memory integration on PCBs.
• Standard memory organization:  64G × 8 format simplifies addressing and integration into systems designed for parallel NAND memory arrays.

Why Choose IC FLASH 512GBIT PAR 152TBGA?

The MT29F512G08CMCBBH7-6R:B positions itself as a high-density parallel NAND Flash memory option with a clear set of electrical and physical specifications: 512 Gbit capacity, MLC technology, 64G × 8 organization, 166 MHz clocking, 2.7 V–3.6 V supply, and a 152‑TBGA package. These documented attributes make it suitable for designs that need a compact, board-mounted non-volatile memory device with a parallel interface.

Designers seeking to integrate substantial parallel Flash capacity into constrained board space can leverage the device’s documented capacity, package, interface, and operating conditions to streamline system-level integration and maintain predictable electrical and thermal parameters across the specified 0°C to 70°C ambient range.

If you would like pricing, lead-time, or availability information, request a quote or submit an inquiry to discuss your requirements and obtain a formal quotation.