MT29F512G08CMCCBH7-6R:C
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 757 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCCBH7-6R:C – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMCCBH7-6R:C is a 512 Gbit non-volatile NAND flash memory device implemented with multi-level cell (MLC) technology. It is organized as 64G × 8 and provides a parallel memory interface with a 166 MHz clock frequency.
This device is intended for systems that require high-density parallel NAND flash storage in a compact BGA footprint, offering a defined supply voltage range (2.7 V–3.6 V) and a commercial operating temperature range of 0°C–70°C.
Key Features
- Memory Core 512 Gbit capacity implemented as MLC NAND; memory organization is 64G × 8.
- Interface & Performance Parallel memory interface with a specified clock frequency of 166 MHz for synchronous operation.
- Power Supply voltage range of 2.7 V–3.6 V to match common system rails.
- Package 152-TBGA package, supplier device package specified as 152-TBGA (14×18), for a compact ball-grid array solution.
- Memory Format & Mounting FLASH memory format; mounting type recorded as Non-Volatile.
- Operating Temperature Commercial temperature range: 0°C–70°C (TA).
Unique Advantages
- High storage density: 512 Gbit capacity enables large data storage in a single device, reducing system component count.
- Parallel interface option: Parallel memory interface with 166 MHz clock supports integration into systems designed for parallel NAND architectures.
- Standard supply compatibility: 2.7 V–3.6 V voltage range aligns with common power rails for straightforward power provisioning.
- Compact BGA footprint: 152-TBGA (14×18) package offers a space-efficient solution for high-density memory integration.
- Commercial temperature rating: 0°C–70°C operating range suitable for standard commercial applications and environments.
Why Choose IC FLASH 512GBIT PAR 152TBGA?
The MT29F512G08CMCCBH7-6R:C delivers a high-capacity, parallel NAND flash option in a compact 152-TBGA package, providing a straightforward integration path for designs that require dense non-volatile storage. Its 64G × 8 organization and 166 MHz clock specification make it suitable for systems designed around parallel flash architectures.
With a defined supply voltage range of 2.7 V–3.6 V and a commercial operating temperature range of 0°C–70°C, this device is positioned for applications where a single-device, high-density FLASH solution is needed within standard system power and thermal constraints.
Request a quote or submit an inquiry for MT29F512G08CMCCBH7-6R:C to obtain pricing and availability details for your design evaluation.
