MT29F512G08CMEABH7-12:A

The MT29F512G08CMEABH7-12:A is a non-volatile FLASH NAND (MLC) memory device providing 512 Gbit of parallel storage in a 152-TBGA package. It is organized as 64G × 8 and presents a parallel memory interface with an 83 MHz clock frequency.

This device is intended for electronic systems that require high-density parallel flash memory with defined supply and thermal operating ranges, and compact board-level packaging for integration.

Key Features

• Memory Technology  NAND FLASH using Multi-Level Cell (MLC) technology as specified in the product data.
• Capacity & Organization  512 Gbit total capacity organized as 64G × 8 for high-density storage in a single device.
• Interface & Performance  Parallel memory interface with a clock frequency of 83 MHz for parallel access patterns.
• Power  Operates from a 2.7 V to 3.6 V supply range, providing tolerance across typical system supply rails within that range.
• Package & Mounting  Supplied in a 152-TBGA package (14 × 18) for board-level integration and compact footprint.
• Operating Temperature  Specified ambient operating temperature range of 0°C to 70°C (TA).
• Memory Format  Non-volatile FLASH memory format suitable where persistent storage is required.

Typical Applications

• System non-volatile storage  Provides 512 Gbit of parallel FLASH storage for electronic systems that require persistent data retention.
• High-density data storage  Used where large-capacity NAND FLASH is required in a single device to reduce board-level component count.
• Firmware and code storage  Suitable for storing firmware or code images that must remain across power cycles, leveraging the device's non-volatile FLASH format.

Unique Advantages

• High density 512 Gbit capacity: Enables consolidation of large data storage into a single device based on the specified organization.
• Parallel interface with 83 MHz clock: Supports parallel access patterns as defined by the product's interface and clock frequency.
• Wide supply voltage range (2.7 V–3.6 V): Offers flexibility within the specified supply window for various system power designs.
• Compact 152-TBGA (14×18) package: Facilitates board-level integration where package footprint and height are considerations.
• Defined operating temperature range: Specified operation from 0°C to 70°C for applications within that ambient range.
• MLC NAND technology: Provides multi-level cell storage as stated in the product specifications.

Why Choose IC FLASH 512GBIT PAR 152TBGA?

The MT29F512G08CMEABH7-12:A positions itself as a high-density, parallel NAND FLASH memory option with a clear set of electrical, thermal, and packaging specifications. Its 512 Gbit capacity, 64G × 8 organization, 83 MHz parallel interface, and 152-TBGA package make it suitable for designers seeking specified non-volatile storage capacity in a compact form factor.

This device is appropriate for designs and teams that require verifiable device-level specifications—capacity, interface clocking, supply range, and operating temperature—to ensure predictable integration and long-term maintainability within the stated operating conditions.

For pricing, availability, or to request a formal quote for MT29F512G08CMEABH7-12:A, please contact sales or request a quotation through your usual procurement channels.