MT29F512G08CMECBH7-12:C

The MT29F512G08CMECBH7-12:C is a 512 Gbit non-volatile NAND flash memory device in a parallel interface format. It uses multi-level cell (MLC) NAND technology with a memory organization of 64G × 8 and operates at a clock frequency of 83 MHz.

Designed for high-density embedded storage needs, this device provides a compact 152‑TBGA (14×18) package and supports a supply voltage range of 2.7 V to 3.6 V with an operating ambient temperature range of 0 °C to 70 °C. It is manufactured by Micron Technology Inc.

Key Features

• Memory Type & Technology Non-volatile NAND flash memory using MLC technology for high-density data storage in a 512 Gbit configuration.
• Memory Organization Organized as 64G × 8 to present an 8-bit wide parallel memory interface.
• Interface & Clock Parallel memory interface with a specified clock frequency of 83 MHz for synchronous operation.
• Supply Voltage Operates from 2.7 V to 3.6 V, accommodating standard 3.3 V system rails.
• Package 152‑TBGA (14×18) package for compact board-level integration and high component density.
• Operating Temperature Rated for 0 °C to 70 °C ambient temperature (TA), suitable for typical commercial temperature environments.

Typical Applications

• Embedded Storage Modules Use as high-density parallel NAND flash in embedded modules that require 512 Gbit non-volatile memory.
• System Firmware & Data Storage Suitable for designs that need a compact, parallel MLC NAND device for firmware retention or bulk data storage within the specified temperature and voltage ranges.
• Consumer and Industrial Electronics Applicable where a 152‑TBGA packaged parallel flash device with 2.7 V–3.6 V supply and 0 °C–70 °C operation fits system requirements.

Unique Advantages

• High Storage Density: 512 Gbit capacity in a single device reduces the need for multiple components to achieve large non-volatile storage.
• Parallel Interface Compatibility: 8-bit parallel organization (64G × 8) supports legacy and parallel-memory system architectures without serial conversion.
• Compact TBGA Package: 152‑TBGA (14×18) package minimizes PCB area while delivering high memory capacity.
• Flexible Power Range: 2.7 V to 3.6 V supply range allows integration with common 3.3 V systems.
• Commercial Temperature Rating: 0 °C to 70 °C operating range aligns with many commercial and consumer product requirements.

Why Choose IC FLASH 512GBIT PAR 152TBGA?

The MT29F512G08CMECBH7-12:C brings together 512 Gbit MLC NAND density, an 8-bit parallel interface, and a compact 152‑TBGA package to address designs that require large non-volatile storage in a small footprint. Its 2.7 V–3.6 V supply compatibility and 0 °C–70 °C operating range make it suitable for a range of commercial embedded applications.

Backed by Micron Technology Inc., this device is intended for system designers and procurement teams seeking a high-capacity parallel NAND solution that integrates into existing parallel-memory architectures while meeting defined electrical and thermal requirements.

Please request a quote or contact sales to discuss pricing, lead times, and availability for the MT29F512G08CMECBH7-12:C.