MT29F512G08CMEABH7-12:A TR
| Part Description |
IC FLASH 512GBIT PAR 152TBGA |
|---|---|
| Quantity | 1,176 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-TBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMEABH7-12:A TR – IC FLASH 512GBIT PAR 152TBGA
The MT29F512G08CMEABH7-12:A TR is a 512 Gbit non-volatile NAND flash memory device based on MLC technology. It provides a 64G x 8 memory organization and a parallel memory interface in a 152-TBGA (14×18) package.
This device targets applications that require high-density parallel flash storage with an operating range of 0°C to 70°C and a supply voltage between 2.7 V and 3.6 V. The device specifies an 83 MHz clock frequency for interface timing.
Key Features
- Memory Core 512 Gbit non-volatile NAND flash memory using MLC (Multi-Level Cell) technology for high density storage.
- Memory Organization & Capacity Organized as 64G × 8, enabling straightforward byte-wide access patterns in parallel systems.
- Interface & Performance Parallel memory interface with an 83 MHz clock frequency for timing and data transfer coordination.
- Power Operates from a 2.7 V to 3.6 V supply range, accommodating common 3.0 V system rails.
- Package 152-TBGA (14×18) package that consolidates high-density memory in a compact ball grid array footprint.
- Environmental Range Rated for an ambient operating temperature range of 0°C to 70°C (TA).
Unique Advantages
- High storage density: 512 Gbit capacity provides substantial non-volatile storage in a single device.
- Byte-wide organization: 64G × 8 memory organization simplifies integration with parallel data buses.
- Parallel interface support: Designed for parallel memory architectures, enabling predictable timing at the specified 83 MHz clock rate.
- Flexible power window: 2.7 V to 3.6 V supply tolerance allows use with common 3.0 V system voltages.
- Compact TBGA packaging: 152-TBGA (14×18) package offers a high-density physical solution for space-constrained boards.
- Single-vendor sourcing: Offered by Micron Technology Inc., providing device traceability to a known manufacturer.
Why Choose MT29F512G08CMEABH7-12:A TR?
The MT29F512G08CMEABH7-12:A TR is positioned as a high-density NAND flash solution for designs requiring parallel flash storage in a compact TBGA package. Its 512 Gbit capacity, 64G × 8 organization, and MLC technology deliver a dense memory option while the 2.7 V–3.6 V supply range and 0°C–70°C operating window align with standard commercial system environments.
This device is suitable for designs that prioritize large non-volatile storage in a single component footprint and prefer parallel interface integration. It is provided by Micron Technology Inc., offering a clear manufacturer source for procurement and lifecycle planning.
Request a quote or contact sales to discuss pricing, lead times, and availability for the MT29F512G08CMEABH7-12:A TR.
