MT29F512G08CMCEBJ4-37ITR:E
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 852 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 267 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | PENDING ECCN | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CMCEBJ4-37ITR:E – IC FLASH 512Gbit Parallel 132-VBGA
The MT29F512G08CMCEBJ4-37ITR:E is a 512 Gbit non-volatile NAND flash memory device using MLC (multi-level cell) technology. It is organized as 64G × 8 with a parallel memory interface and operates from a 2.7 V to 3.6 V supply.
This device targets designs that require high-density flash storage in a compact 132-VBGA (12×18) package, with a specified clock frequency of 267 MHz and an operating ambient temperature range of −40°C to 85°C.
Key Features
- Memory Core & Technology 512 Gbit capacity implemented as 64G × 8 using FLASH - NAND (MLC) technology for high-density non-volatile storage.
- Interface Parallel memory interface for direct integration with parallel NAND controller architectures.
- Performance Specified clock frequency of 267 MHz to support device timing requirements.
- Voltage Wide supply voltage range of 2.7 V to 3.6 V to accommodate common system power rails.
- Package 132-VBGA package (12×18) for a compact board footprint and high pin density.
- Operating Temperature Rated for −40°C to 85°C (TA) to support a broad range of ambient conditions.
- Non-Volatile Storage Designed as non-volatile FLASH memory for persistent data retention across power cycles.
Typical Applications
- Embedded Storage High-density non-volatile storage for systems that require large on-board flash capacity with a parallel interface.
- Industrial Equipment Use in equipment with wide ambient temperature requirements, leveraging the −40°C to 85°C operating range.
- Data Logging and Archival Persistent MLC NAND storage for applications that need mass storage in a compact package.
Unique Advantages
- High Density Storage: 512 Gbit capacity supports designs that need large flash memory on a single device.
- Parallel Interface Compatibility: Parallel memory interface simplifies integration with parallel NAND controller designs.
- Compact VBGA Packaging: 132-VBGA (12×18) package delivers high pin density in a space-efficient footprint.
- Flexible Power Range: 2.7 V to 3.6 V supply range fits common system power rails and simplifies power domain design.
- Wide Temperature Operation: −40°C to 85°C rating supports deployment across a broad range of ambient conditions.
- MLC NAND Technology: Multi-level cell flash format provides higher bit density per die for capacity-optimized designs.
Why Choose MT29F512G08CMCEBJ4-37ITR:E?
This Micron 512 Gbit parallel NAND flash device is positioned for designs that require high-capacity, non-volatile memory in a compact 132-VBGA package with flexible power and temperature tolerances. Its 64G × 8 organization and MLC technology deliver substantial on-board storage where board space and density matter.
Choose this device for applications that need verifiable electrical and environmental parameters—such as clock frequency, voltage range, organization, and package—documented for straightforward hardware integration and long-term design planning.
Request a quote or contact sales for pricing, availability, and lead-time information for the MT29F512G08CMCEBJ4-37ITR:E.
