MT29F512G08CUCABH3-10:A TR
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 491 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10:A TR – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10:A TR is a 512 Gbit non-volatile flash memory device using NAND multi-level cell (MLC) technology with a parallel memory interface. It is organized as 64G × 8 and is specified for operation at a clock frequency of 100 MHz.
This device is supplied in a 100‑LBGA (12×18) package and operates from a 2.7 V to 3.6 V supply with an ambient temperature range of 0°C to 70°C, making it suitable for designs that require a high-capacity parallel FLASH memory solution in a compact package.
Key Features
- Memory Type: Non-volatile NAND FLASH (MLC) technology providing persistent data storage without power.
- Capacity & Organization: 512 Gbit total capacity, organized as 64G × 8 to support wide-data applications.
- Interface & Timing: Parallel memory interface with a specified clock frequency of 100 MHz for synchronous operation.
- Supply Voltage: Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V system domains.
- Package: 100‑lead LBGA (12×18 mm) package offering a compact footprint for board-level integration.
- Operating Temperature: Rated for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Embedded Storage: Use as on-board non-volatile storage where a 512 Gbit parallel FLASH device is required for large data sets or firmware.
- System Memory Expansion: Integration into designs needing additional parallel flash capacity within the 2.7–3.6 V supply range.
- Board-Level Flash Replacement: Suitable where a compact 100‑LBGA package is preferred to reduce PCB area while maintaining high capacity.
Unique Advantages
- High Storage Density: 512 Gbit capacity enables large-volume data retention in a single device, reducing the need for multiple parts.
- Parallel Interface Compatibility: Parallel memory organization (64G × 8) and 100 MHz clock support integration with parallel-memory system designs.
- Standard Voltage Range: 2.7 V to 3.6 V supply range aligns with common 3.3 V system rails for straightforward power integration.
- Compact LBGA Package: 100‑lead LBGA (12×18) provides a space-efficient footprint for high-density PCB layouts.
- MLC NAND Technology: Multi-level cell FLASH implementation as specified in the product data.
Why Choose IC FLASH 512GBIT PAR 100LBGA?
The MT29F512G08CUCABH3-10:A TR offers a combination of large non-volatile capacity, parallel interface operation, and a compact 100‑LBGA package. Its 2.7 V to 3.6 V supply compatibility and 0°C to 70°C operating range make it appropriate for designs that require substantial on-board FLASH storage within those electrical and thermal constraints.
This device is suited to engineers and procurement teams looking for a single-device solution to meet high-capacity parallel flash requirements while maintaining a small PCB footprint and standard supply voltage compatibility.
Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F512G08CUCABH3-10:A TR.
