MT29F512G08CUCABH3-10ITZ:A
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 132 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10ITZ:A – 512 Gbit Parallel NAND Flash, 100-LBGA
The MT29F512G08CUCABH3-10ITZ:A is a 512 Gbit non-volatile flash memory device from Micron Technology Inc., based on NAND MLC technology. It provides a parallel memory interface and a 64G × 8 organization to deliver high-density storage in a compact 100-LBGA (12×18) package.
Designed for systems that require high-capacity parallel flash, the device supports a 100 MHz clock frequency and operates from a 2.7 V to 3.6 V supply across an ambient temperature range of −40°C to 85°C.
Key Features
- Core / Memory — 512 Gbit non-volatile flash memory implemented as 64G × 8 organization using NAND MLC technology.
- Interface — Parallel memory interface with a specified clock frequency of 100 MHz for bus-timed operation.
- Power — Operates from a wide supply range of 2.7 V to 3.6 V to support common 3.0/3.3 V system domains.
- Package — 100-LBGA package in a 12×18 footprint for board-level integration and space-efficient mounting.
- Temperature Range — Rated for ambient operation from −40°C to 85°C (TA) to cover a broad range of environmental conditions.
Unique Advantages
- High-density storage: 512 Gbit capacity enables consolidation of large non-volatile data storage into a single device.
- Byte-wide organization: 64G × 8 arrangement simplifies parallel memory interfacing in systems designed for byte-wide data paths.
- Flexible power integration: 2.7 V–3.6 V supply range allows compatibility with common 3.0 V and 3.3 V system rails.
- Standard parallel timing: 100 MHz clock frequency supports established parallel bus timing requirements.
- Compact BGA footprint: 100-LBGA (12×18) package supports high-density PCB layouts while providing soldered board attachment.
- Wide temperature capability: −40°C to 85°C operating range addresses deployments across varied ambient conditions.
Why Choose MT29F512G08CUCABH3-10ITZ:A?
The MT29F512G08CUCABH3-10ITZ:A combines high-capacity NAND MLC flash with a parallel interface and a compact 100-LBGA package to deliver a straightforward, high-density non-volatile storage option from Micron Technology Inc. Its electrical and thermal specifications—2.7 V–3.6 V supply and −40°C to 85°C ambient operation—make it suitable for designs that require robust operation within those parameters.
This device is appropriate for engineers and procurement teams seeking a verified Micron flash component that offers large storage capacity, byte-wide memory organization, and standard parallel timing for integration into systems that support these interface and package choices.
Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F512G08CUCABH3-10ITZ:A.
