MT29F512G08CUCABH3-10:A
| Part Description |
IC FLASH 512GBIT PAR 100LBGA |
|---|---|
| Quantity | 191 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CUCABH3-10:A – IC FLASH 512GBIT PAR 100LBGA
The MT29F512G08CUCABH3-10:A is a 512 Gbit parallel NAND flash memory device using MLC technology in a 100‑LBGA (12×18) package. It provides high-density non-volatile storage with a parallel memory interface and a 100 MHz clock frequency for systems that require solid-state data retention.
This device targets designs needing large-capacity, board-mounted flash storage with a 2.7 V to 3.6 V supply range and a commercial operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Core 512 Gbit capacity organized as 64G × 8 for large non-volatile storage density.
- Technology FLASH – NAND (MLC) technology providing multi-level cell storage format.
- Interface & Performance Parallel memory interface with a specified clock frequency of 100 MHz for synchronous operation.
- Power Operating voltage range of 2.7 V to 3.6 V to support standard 3.3 V system rails.
- Package 100‑LBGA (12×18) supplier device package for compact board-level integration.
- Temperature Range Commercial operating temperature: 0 °C to 70 °C (TA).
Typical Applications
- Embedded systems — Parallel NAND flash storage for systems requiring large non-volatile memory capacity on-board.
- Storage modules — High-density flash for use in custom storage arrays and solid-state subsystems that use a parallel interface.
- Consumer and industrial electronics — Board-mounted flash memory where a 100‑LBGA package and 2.7 V–3.6 V operation are required.
Unique Advantages
- High-density non-volatile storage: 512 Gbit capacity organized as 64G × 8 enables large data or firmware storage on a single device.
- Standard parallel interface: Parallel memory interface simplifies integration with controllers designed for parallel NAND.
- Commercial temperature support: Rated 0 °C to 70 °C for designs targeting commercial operating environments.
- Flexible supply range: 2.7 V–3.6 V voltage support aligns with common 3.3 V system rails.
- Compact package: 100‑LBGA (12×18) package provides a small board footprint for dense electronic assemblies.
- MLC NAND technology: Multi-level cell architecture increases effective storage density per die.
Why Choose MT29F512G08CUCABH3-10:A?
The MT29F512G08CUCABH3-10:A positions itself as a high-density, board-mounted parallel NAND flash option for commercial applications that require substantial non-volatile storage in a compact 100‑LBGA package. Its 64G × 8 organization, 100 MHz clocking, and 2.7 V–3.6 V supply window make it suitable for integration into systems designed around parallel flash interfaces.
Designed and manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams seeking a single-device solution for large-capacity flash needs while maintaining standard voltage and temperature characteristics for commercial designs.
If you would like pricing, lead-time information, or to request a formal quote for the MT29F512G08CUCABH3-10:A, please submit a quote request or contact sales to discuss your project requirements and procurement options.
