MT29F512G08CFCBBWP-10M:B TR

The MT29F512G08CFCBBWP-10M:B TR is a 512 Gbit non-volatile NAND flash memory device implemented in multi-level cell (MLC) technology. It provides a 64G × 8 memory organization with a parallel memory interface and a 100 MHz clock for systems that require high-density parallel flash storage.

Packaged in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width), and operating from a 2.7 V to 3.6 V supply at an ambient temperature range of 0°C to 70°C, this part is intended for designs that need a compact, high-capacity parallel flash solution.

Key Features

• Memory Type Non-volatile NAND flash using MLC technology for high-density storage in a single device.
• Capacity & Organization 512 Gbit total capacity arranged as 64G × 8 to support wide-data parallel operations.
• Interface & Timing Parallel memory interface with a specified clock frequency of 100 MHz for synchronous access timing.
• Power Operates from a 2.7 V to 3.6 V supply range to match common 3.3 V system rails.
• Package 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) surface-mount package for board-level integration.
• Operating Range Ambient operating temperature specified from 0°C to 70°C (TA).

Typical Applications

• Embedded systems Provides high-density parallel flash storage where a 48-TSOP I package and 2.7–3.6 V operation are required.
• On-board firmware and code storage Stores large firmware images or application code using the device's 512 Gbit MLC NAND capacity and parallel interface.
• High-capacity flash modules Suited for module designs that aggregate parallel NAND devices for expanded non-volatile storage.

Unique Advantages

• High capacity in a compact package: 512 Gbit of MLC NAND flash in a 48-TSOP I footprint helps maximize storage density while conserving PCB area.
• Parallel interface compatibility: 64G × 8 organization and a parallel memory interface enable direct parallel data paths for systems designed around parallel flash.
• Standard supply voltage range: 2.7 V to 3.6 V operation aligns with common 3.3 V system rails to simplify power design.
• Defined operating temperature: Specified for 0°C to 70°C ambient environments, enabling selection for temperature-constrained applications.
• Clear timing specification: 100 MHz clock frequency provided for system timing and integration planning.

Why Choose MT29F512G08CFCBBWP-10M:B TR?

The MT29F512G08CFCBBWP-10M:B TR delivers a high-density, parallel NAND flash solution in a standard 48-TSOP I package, offering 512 Gbit of non-volatile storage with MLC technology. Its parallel interface, 64G × 8 organization, and 100 MHz clock specification make it a straightforward choice for designs that require compact, high-capacity parallel flash memory operating from 2.7 V to 3.6 V across a 0°C to 70°C ambient range.

This device suits development teams and procurement focused on integrating substantial parallel flash capacity into board-level designs where package footprint, supply compatibility, and defined operating conditions are primary selection criteria.

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