MT29F512G08CFCBBWP-10:B TR
| Part Description |
IC FLASH 512GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,413 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CFCBBWP-10:B TR – IC FLASH 512GBIT PAR 48TSOP I
The MT29F512G08CFCBBWP-10:B TR is a 512 Gbit parallel NAND flash memory device using MLC (multi-level cell) flash architecture. It is organized as 64G × 8 and provides non-volatile storage in a 48-TSOP I package.
Designed for systems that require high-density parallel flash, this device offers a 100 MHz clock frequency, a 2.7 V to 3.6 V supply range, and an ambient operating range of 0°C to 70°C, enabling straightforward integration into designs that use standard 48-TFSOP footprint components.
Key Features
- Memory Technology NAND flash (MLC) non-volatile memory providing multi-level cell storage.
- Memory Organization & Capacity Organized as 64G × 8 for a total memory size of 512 Gbit.
- Interface Parallel memory interface with a clock frequency specification of 100 MHz.
- Power Supply Supports a supply voltage range of 2.7 V to 3.6 V.
- Package 48-TFSOP (48-TSOP I) package with a 0.724" (18.40 mm) width footprint.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
- Memory Format FLASH memory format, suitable for non-volatile storage requirements.
Unique Advantages
- High storage density: 512 Gbit capacity in a single device (64G × 8) reduces the number of parts required for large non-volatile storage.
- Parallel interface with defined clock: 100 MHz clock frequency facilitates integration with parallel-memory system designs requiring that timing.
- Flexible power range: 2.7 V to 3.6 V operation supports a variety of system power rails.
- Standard TSOP package: 48-TFSOP (48-TSOP I) package and 18.40 mm width match common board footprints for easier placement and assembly.
- Specified ambient temperature range: 0°C to 70°C rating aligns with standard commercial operating environments.
Why Choose MT29F512G08CFCBBWP-10:B TR?
The MT29F512G08CFCBBWP-10:B TR positions itself as a high-density, parallel NAND flash option for designs that need 512 Gbit of non-volatile storage in a 48-TSOP I form factor. Its combination of MLC NAND architecture, 100 MHz clock capability, and a 2.7 V–3.6 V supply range supports integration into systems that rely on parallel flash memory with defined timing and power constraints.
Choose this device when you require compact, high-capacity flash memory in a standard TSOP footprint and when your design constraints align with the specified operating temperature and supply voltage ranges. The part’s clear specifications make it suitable for procurement and BOM planning where a parallel NAND flash with these exact attributes is required.
Request a quote or submit an inquiry for MT29F512G08CFCBBWP-10:B TR to obtain pricing and availability for your project requirements.
