MT29F512G08CEHBBJ4-3R:B

The MT29F512G08CEHBBJ4-3R:B is a 512 Gbit parallel NAND flash memory device using MLC FLASH technology. It provides high-density, non-volatile storage in a 132-VBGA (12×18) package with a parallel memory interface.

Designed for systems that require large on-board non-volatile memory capacity, the device offers a defined clock frequency and a supply voltage range suitable for a variety of embedded and storage applications operating within the specified commercial temperature range.

Key Features

• Memory Core 512 Gbit capacity arranged as 64G × 8, implemented with FLASH - NAND (MLC) technology for high-density non-volatile storage.
• Interface & Performance Parallel memory interface with a specified clock frequency of 333 MHz for timing-driven integration into parallel bus systems.
• Package 132-VBGA package (12×18) provides a compact BGA footprint for board-level integration where space and pin count are factors.
• Voltage Supply Operates across a 2.5 V to 3.6 V supply range, enabling use with a range of system power architectures.
• Operating Temperature Rated for 0°C to 70°C (TA), suitable for commercial-temperature environments.
• Non-Volatile Storage Explicit non-volatile memory format for persistent data retention across power cycles.

Typical Applications

• Embedded Storage — High-capacity on-board storage for embedded systems that require persistent program or data storage using a parallel NAND interface.
• Consumer Electronics — Devices that need compact, high-density non-volatile memory in a BGA footprint within the 0°C–70°C operating range.
• Legacy Parallel-Interface Systems — Systems or designs that employ parallel flash memory buses and benefit from direct parallel flash integration.
• Industrial Equipment — Commercial-temperature industrial applications that require high-capacity non-volatile storage at standard supply voltages.

Unique Advantages

• High Storage Density: 512 Gbit (64G × 8) capacity enables consolidation of storage needs onto a single device.
• Parallel Interface Compatibility: Parallel memory interface and a defined 333 MHz clock simplify integration with parallel bus architectures.
• Compact BGA Package: 132-VBGA (12×18) delivers a small board footprint for designs with space constraints.
• Flexible Supply Range: 2.5 V to 3.6 V operation supports deployment across common system power rails.
• Commercial Temperature Rating: 0°C to 70°C qualification aligns with many consumer and commercial deployments.
• MLC NAND Technology: FLASH - NAND (MLC) provides high-density non-volatile storage in a single device.

Why Choose IC FLASH 512GBIT PAR 132VBGA?

This MT29F512G08CEHBBJ4-3R:B device positions itself as a high-density, parallel-interface NAND flash solution from Micron Technology Inc., combining a 512 Gbit MLC architecture with a compact 132-VBGA package. Its defined clock rate and broad supply voltage range make it straightforward to integrate into systems that require substantial non-volatile memory capacity.

It is appropriate for designers and procurement teams targeting commercial-temperature embedded and storage applications that need a single-device, high-capacity FLASH solution with a parallel interface and compact footprint, providing predictable electrical and mechanical characteristics for board-level designs.

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